STTH1003SBY-TR ST Microelectronics Fast Recovery Diode, 1A 100V, TO-220AB Package

  • This device efficiently converts electrical current, enhancing circuit performance and reducing energy loss.
  • Featuring a high voltage rating, it ensures safe operation under demanding electrical conditions.
  • The compact package design minimizes board space, facilitating integration into tight layouts.
  • Ideal for power supply circuits where reliable switching improves overall system stability.
  • Manufactured to meet strict quality controls, ensuring consistent reliability and long-term durability.
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STTH1003SBY-TR Overview

The STTH1003SBY-TR is a high-performance ultrafast diode designed for power electronics applications requiring efficient switching and low forward voltage drop. Featuring a 10 A average forward current and a repetitive peak reverse voltage of 1000 V, it supports robust operation in demanding industrial environments. Its ultrafast recovery time improves system efficiency by reducing switching losses, making it ideal for power conversion and rectification tasks. Packaged in a compact, thermally efficient TO-220AC form factor, this diode ensures reliable integration into various power supply designs. For detailed technical data and sourcing, visit IC 製造商.

STTH1003SBY-TR Technical Specifications

參數 價值 單位
Repetitive Peak Reverse Voltage (VRRM) 1000 V
平均正向電流 (IF(AV)) 10 A
突波非回復正向電流 (IFSM) 130 A
Forward Voltage Drop (VF) at IF=10A 1.35 V
反向恢復時間 (trr) 75 ns
Power Dissipation (Ptot) 75 W
Operating Junction Temperature (Tj) -65至+150 ??C
Storage Temperature (Tstg) -65至+150 ??C
包裝 TO-220AC

STTH1003SBY-TR Key Features

  • 超快的恢復時間: The 75 ns reverse recovery time reduces switching losses, enhancing efficiency in high-frequency power conversion circuits.
  • High Voltage Blocking Capability: With a 1000 V repetitive peak reverse voltage, it supports applications requiring robust voltage endurance.
  • High Surge Current Handling: The device can withstand surge currents up to 130 A, ensuring reliability during transient load conditions.
  • 低正向壓降: A forward voltage of 1.35 V minimizes conduction losses and thermal dissipation, improving overall system performance.

典型應用

  • Power supply rectification in industrial and consumer electronics, where ultrafast switching and high voltage capability improve efficiency and reliability.
  • Freewheeling diode in DC-DC converters to protect switching devices and maintain stable operation under high current load.
  • Snubber circuits in motor drives and inverters to reduce voltage spikes and improve device longevity.
  • Power factor correction (PFC) circuits in switched-mode power supplies for improved energy efficiency and compliance with regulatory standards.

STTH1003SBY-TR Advantages vs Typical Alternatives

This ultrafast diode stands out with its superior reverse recovery time and high surge current capacity, offering enhanced switching efficiency and robustness compared to standard fast recovery diodes. Its low forward voltage drop reduces conduction losses, improving thermal performance and system reliability. The TO-220AC package facilitates effective heat dissipation and easy mounting, making it a preferred choice for engineers seeking durable, high-voltage rectification solutions in industrial power electronics.

STTH1003SBY-TR Brand Info

The STTH1003SBY-TR is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power discrete components designed to optimize energy efficiency and reliability in industrial and automotive applications. This diode is part of their ultrafast diode portfolio, known for combining high voltage ratings with ultrafast switching characteristics. The company emphasizes quality, innovation, and extensive technical support, ensuring the STTH1003SBY-TR meets stringent industrial standards and integration requirements.

常見問題

What is the maximum surge current rating of the STTH1003SBY-TR, and why is it important?

The diode can handle a non-repetitive surge current of up to 130 A. This rating is critical for withstanding transient overloads or inrush currents without damage, ensuring device robustness in harsh operating conditions typical of power electronics applications.

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