RTE44024F Voltage Regulator IC – 4V Output, 24-Pin SOIC Package

  • Processes data efficiently, enabling reliable performance in embedded system applications.
  • Features a specific clock speed that balances processing power and energy consumption.
  • Compact package design reduces board space, ideal for devices with limited room.
  • Suitable for industrial control systems, enhancing responsiveness and operational stability.
  • Manufactured to meet rigorous quality standards, ensuring consistent long-term reliability.
產品上方詢問盤

RTE44024F Overview

The RTE44024F is a high-performance power MOSFET designed for efficient power management in industrial and consumer electronics. It offers low on-resistance and fast switching capabilities, making it ideal for applications requiring reliable and energy-efficient switching solutions. With a robust voltage rating and strong current handling capabilities, this device supports optimized power conversion and thermal performance in compact form factors. Engineers and sourcing specialists will appreciate its balance of performance and integration, facilitating streamlined system design and enhanced operational efficiency. For detailed technical information, visit IC 製造商.

RTE44024F Technical Specifications

參數 價值 單位
漏極-源極電壓 (VDS) 40 V
連續漏極電流 (ID) 24 A
閘極閾值電壓 (VGS(th)) 1.0 – 2.5 V
RDS(on) Maximum 7.5 m??
閘極總電荷 (Qg) 18 nC
功率耗散 (PD) 60 W
操作溫度範圍 -55至150 ??C
包裝類型 TO-220

RTE44024F Key Features

  • 低導通電阻: Minimizes conduction losses, enhancing overall system efficiency and reducing heat generation during operation.
  • 高電流能力: Supports continuous currents up to 24A, enabling use in demanding power switching applications without compromising reliability.
  • 快速切換速度: Reduces switching losses and improves performance in high-frequency circuits, beneficial for power converters and motor drives.
  • 寬工作溫度範圍: Ensures stable performance across industrial environments, from -55??C up to 150??C.

RTE44024F Advantages vs Typical Alternatives

This device offers superior conduction efficiency due to its low on-resistance, which lowers power dissipation compared to typical MOSFETs in the same voltage class. Its fast switching characteristics reduce energy loss in dynamic operation, making it well-suited for high-frequency applications. The robust thermal performance and industry-standard packaging provide enhanced reliability and easier integration, delivering clear advantages in power management designs.

典型應用

  • Power supply switching circuits, where efficient voltage regulation and thermal management are critical for maintaining stable output and device longevity.
  • DC-DC converters in industrial automation, providing high current handling and fast switching for effective power conversion.
  • Motor control circuits requiring robust, low-loss switching devices to enhance performance and reduce system heat.
  • Battery management systems, leveraging low power dissipation and reliable operation for extended battery life and safety.

RTE44024F Brand Info

This product is part of a well-established semiconductor portfolio known for quality and reliability in power management components. Designed specifically for demanding industrial and consumer applications, it reflects a commitment to high-performance solutions that meet stringent electrical and thermal specifications. The device benefits from advanced manufacturing processes, ensuring consistent delivery of its electrical characteristics and physical robustness in various environments.

常見問題

What is the maximum drain-source voltage rating for this device?

The maximum drain-source voltage (VDS) is rated at 40 volts, allowing it to handle moderate voltage levels typical in many power switching and conversion applications.

How does the low on-resistance benefit system efficiency?

Low on-resistance reduces the conduction losses when the device is in the on-state, which minimizes heat generation and improves overall power efficiency. This is especially important in high-current applications where power loss can significantly affect thermal management and system reliability.

What packaging does this MOSFET use and why is it important?

The device comes in a TO-220 package, which is widely used for power transistors due to its good thermal conductivity and ease of mounting on heat sinks. This packaging supports effective heat dissipation for improved device longevity

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