IPW60R037P7XKSA1 Overview
The IPW60R037P7XKSA1 is a high-performance power MOSFET designed for demanding industrial and commercial applications. This device delivers enhanced efficiency and robust reliability, making it an excellent choice for power conversion, switching, and energy management systems. Its advanced technology supports low conduction losses and fast switching performance, enabling optimized designs in high-voltage environments. To learn more about this product, visit IC 製造商.
IPW60R037P7XKSA1 Technical Specifications
| Attribute | 價值 |
|---|---|
| 裝置類型 | N-Channel MOSFET |
| 漏極-源極電壓 (VDS) | 600 V |
| 連續漏極電流 (ID) | 65 A |
| Drain-Source On-State Resistance (RDS(on)) | 0.037 ?? |
| 功率耗散 | 417 W |
| Gate Charge (Qg) | 191 nC |
| Package / Case | TO-247 |
| 操作溫度範圍 | -55??C to 150??C |
| 安裝類型 | Through Hole |
IPW60R037P7XKSA1 Key Features
- 低 RDS(on) value of 0.037 ?? significantly reduces conduction losses, improving overall system efficiency.
- High voltage tolerance up to 600 V enables reliable operation in demanding high-voltage circuits and industrial power supplies.
- Large continuous drain current capability (65 A) supports heavy load switching and high-power designs.
- Robust TO-247 package offers excellent thermal management and mechanical stability, ideal for harsh industrial environments.
- Wide operating temperature range from -55??C to 150??C ensures reliable performance in both low and high temperature applications.
- Fast switching characteristics due to optimized gate charge (191 nC), allowing high-frequency operation and improved dynamic response.
- Through-hole mounting provides secure attachment and effective heat dissipation for power electronics assemblies.
IPW60R037P7XKSA1 Advantages vs Typical Alternatives
This power MOSFET stands out from typical alternatives through its combination of low on-state resistance and high current capability, allowing for reduced power losses and greater efficiency. The robust package and wide temperature range enhance reliability in demanding applications. Its optimized gate charge supports faster switching, which is critical for efficient power conversion and reduced thermal stress in high-performance designs.
暢銷產品
典型應用
- Switch-mode power supplies (SMPS): Ideal for high-efficiency power conversion, the device??s low RDS(on) and high voltage rating make it suitable for primary-side switching in SMPS topologies.
- Motor drives: Used in industrial motor control circuits where high current handling and rugged reliability are essential for sustained operation.
- Solar inverter systems: Suitable for DC-DC and DC-AC conversion stages, enabling efficient energy transfer and grid connectivity in photovoltaic applications.
- Uninterruptible power supplies (UPS): Employed in UPS designs to ensure rapid, reliable switching and to handle substantial current during backup power transitions.
IPW60R037P7XKSA1 Brand Info
The IPW60R037P7XKSA1 is part of a reputable line of high-voltage, high-efficiency MOSFETs aimed at professional industrial and commercial power solutions. This device is engineered to deliver consistent performance in challenging environments, reflecting the manufacturer??s commitment to robust quality and innovation in discrete semiconductor technology. Its features and specifications position it as a preferred choice for engineers seeking reliability, efficiency, and flexibility in power management designs.
常見問題
What is the maximum drain-source voltage supported by this MOSFET?
The device supports a drain-source voltage (VDS) of up to 600 V, making it well-suited for high-voltage industrial and energy conversion applications where safety and reliability are paramount.
精選產品
What are the benefits of the TO-247 package for this product?
The TO-247 package offers excellent thermal performance and mechanical durability. Its large surface area and through-hole mounting facilitate effective heat dissipation, ensuring stable operation under high-power conditions.
Can this MOSFET operate at elevated temperatures?
Yes, it is rated for operation across a wide temperature range from -55??C to 150??C. This allows for reliable use in both low and high ambient temperature environments, making it suitable for various industrial applications.
聯絡我們
How does the low RDS(on) value improve system performance?
A low on-state resistance of 0.037 ?? helps minimize conduction losses, leading to improved overall efficiency and reduced heat generation in power electronic circuits, which is critical in energy-sensitive designs.
Is this device appropriate for fast-switching applications?
With a gate charge of 191 nC and optimized switching performance, the device is well-suited for fast-switching applications such as high-frequency power supplies and inverters, where dynamic response and efficiency are essential.
