DDTB142JC-7-F Power Transistor – High Efficiency, TO-220 Package

  • This component performs precise voltage regulation, ensuring stable power delivery for sensitive electronics.
  • Featuring a low quiescent current, it optimizes energy efficiency, extending battery life in portable devices.
  • The compact package reduces board space, facilitating integration into designs with strict size constraints.
  • Ideal for use in handheld instrumentation, it maintains consistent performance under varying load conditions.
  • Manufactured under controlled processes, the device offers reliable operation and long-term stability.
產品上方詢問盤

DDTB142JC-7-F Overview

The DDTB142JC-7-F is a high-performance dual transistor designed for applications requiring efficient switching and amplification. Featuring low saturation voltage and high current gain, this transistor offers reliable operation in compact SOT-23 packages, making it suitable for high-density circuit designs. Its robust electrical characteristics ensure stable performance under various environmental conditions. This device is ideal for engineers and sourcing specialists seeking dependable semiconductor components for industrial and consumer electronics. For detailed manufacturer information and sourcing options, visit IC 製造商.

DDTB142JC-7-F Technical Specifications

參數 價值
Type NPN Dual Transistor
包裝 SOT-23 (7-Pin)
集電極-發射器電壓 (V執行長) 50 V
集電極電流 (IC) 150 mA
功率耗散 (P總計) 350 mW
直流電流增益 (hFE) 100 到 300
轉換頻率 (fT) 100 MHz (typical)
操作溫度範圍 -55°C 至 +150°C
Base-Emitter Voltage (VBE) 1.2 V (max)

DDTB142JC-7-F Key Features

  • Dual NPN Transistor Configuration: Enables compact circuit design by integrating two matched transistors in a single package, reducing board space and assembly complexity.
  • 低飽和電壓: Minimizes power loss during switching, improving overall circuit efficiency and thermal management.
  • High Current Gain: Provides reliable amplification performance, ensuring stable signal processing in analog and digital circuits.
  • 寬工作溫度範圍: Supports use in harsh industrial environments, maintaining consistent electrical characteristics across temperature extremes.

DDTB142JC-7-F Advantages vs Typical Alternatives

This transistor offers superior integration by combining two NPN transistors in a single SOT-23 package, reducing board footprint compared to discrete components. Its low saturation voltage and high current gain deliver enhanced efficiency and reliable amplification. The wide operating temperature range and robust power dissipation capability make it more dependable than typical alternatives in demanding industrial applications.

典型應用

  • Signal amplification and switching in compact portable devices requiring low power consumption and efficient thermal performance.
  • Driver stages in communication equipment where high-frequency response and gain stability are critical.
  • General-purpose amplification in consumer electronics such as audio and video equipment.
  • Industrial control systems where reliable operation under varying temperature conditions is essential.

DDTB142JC-7-F Brand Info

The DDTB142JC-7-F is a product tailored by IC Manufacturer, known for delivering high-quality semiconductor solutions optimized for industrial and consumer electronics. This dual transistor component reflects the brand??s commitment to innovation, reliability, and compact design, supporting engineers and sourcing specialists in building efficient and robust electronic systems.

常見問題

What is the maximum collector current for this transistor?

The maximum collector current for this device is 150 mA. This rating ensures the transistor can handle moderate load currents typical in switching and amplification circuits without compromising reliability.

What package type does this transistor come in and why is it beneficial?

This transistor is housed in a SOT-23 7-pin package. This small outline package is beneficial for space-constrained designs, enabling high-density PCB layouts while maintaining easy handling and thermal dissipation.

What is the typical current gain range of this transistor?

The device exhibits a DC current gain (hFE) ranging from 100 to 300, providing sufficient amplification for a variety of analog and digital circuit applications, ensuring stable and predictable performance.

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