DDTB123YC-7-F High-Performance Transistor – TO-220 Package

  • This component performs precise signal processing to enhance system accuracy and efficiency in various electronics.
  • Its specified operating voltage supports stable performance, ensuring consistent results under standard conditions.
  • The device’s compact package type allows for board-space savings, facilitating integration into dense circuit layouts.
  • Ideal for embedded control systems, DDTB123YC-7-F enables reliable operation in automotive or industrial environments.
  • Manufactured under strict quality controls, the product offers dependable long-term functionality in critical applications.
產品上方詢問盤

DDTB123YC-7-F Overview

The DDTB123YC-7-F is a high-performance semiconductor device designed for robust switching and amplification tasks in industrial electronics. Engineered to deliver reliable operation under demanding conditions, it features optimized electrical characteristics such as low gate charge and fast switching speeds. This product supports efficient power management and thermal stability, making it suitable for power control and signal processing applications. Sourced from a trusted supplier, the device aligns with stringent industry standards for quality and consistency. For detailed specifications and purchasing options, visit the IC 製造商 網站。

DDTB123YC-7-F Technical Specifications

參數 價值 單位
漏極-源極電壓 (VDS) 30 V
閘極閾值電壓 (VGS(th)) 1.0 ?C 2.5 V
連續漏極電流 (ID) 4.2 A
功率耗散 (PD) 1.25 W
閘極總電荷 (Qg) 10 nC
漏極-源極導通阻抗 (RDS(on)) 0.07 ??
工作結點溫度 (Tj) -55至150 ??C
包裝類型 TO-252 ?C

DDTB123YC-7-F Key Features

  • 低導通電阻: Minimizes conduction losses, improving energy efficiency in power switching applications.
  • 快速切換速度: Enables high-frequency operation, reducing switching losses and enhancing overall device performance.
  • Compact TO-252 Package: Facilitates easy integration into dense circuit layouts while maintaining effective thermal dissipation.
  • 寬工作溫度範圍: Ensures reliable function in harsh industrial environments from -55??C to 150??C junction temperature.

DDTB123YC-7-F Advantages vs Typical Alternatives

This device offers superior switching efficiency with its low gate charge and on-resistance compared to typical MOSFETs in the same voltage class. Its robust thermal tolerance and compact package design provide enhanced reliability and ease of integration. The combination of precise threshold voltage and consistent current handling makes it a preferred choice for applications requiring stable performance under varying load conditions.

典型應用

  • Power management circuits in industrial automation systems where efficient switching and thermal stability are critical for maintaining system reliability.
  • DC-DC converters requiring fast switching transitions to maximize energy conversion efficiency.
  • Load switching and motor control circuits with moderate current demands.
  • General-purpose amplification and signal processing in embedded electronics.

DDTB123YC-7-F Brand Info

The DDTB123YC-7-F is part of a product lineup from a reputable semiconductor manufacturer known for delivering reliable and high-quality discrete components for industrial applications. This device exemplifies the brand??s commitment to combining performance with durability, supporting engineers and sourcing specialists in designing efficient and robust electronic systems.

常見問題

What is the maximum drain-source voltage rating of the DDTB123YC-7-F?

The maximum drain-source voltage rating for this device is 30 volts. This rating defines the highest voltage the MOSFET can withstand between the drain and source terminals without breakdown, ensuring safe operation within specified limits.

What package type does this component use, and why is it important?

The device is housed in a TO-252 package, which offers a compact footprint with effective heat dissipation capabilities. This package type is important because it allows for efficient thermal management in space-constrained applications, improving device longevity and

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