CY62126DV30L-55ZIT Overview
The CY62126DV30L-55ZIT is a high-performance static RAM (SRAM) device designed to deliver fast and reliable memory storage for industrial and embedded applications. Offering a 1 Megabit (128K x 8-bit) density, this SRAM operates at a 55 ns access time, ensuring rapid data retrieval and seamless system performance. It supports a single 3.0 V power supply, optimizing power consumption while maintaining robust operation across a wide temperature range. Packaged in a compact 28-pin TSOP II form factor, it simplifies PCB layout and integration. This device is ideal for buffering, caching, and temporary data storage in applications requiring low latency and high reliability. See more at IC 製造商.
CY62126DV30L-55ZIT Technical Specifications
| 參數 | 規格 |
|---|---|
| 記憶體密度 | 1 Megabit (128K x 8-bit) |
| 存取時間 | 55 ns |
| 操作電壓 | 3.0 V ?? 0.3 V |
| 待機電流 | 5 A (典型值) |
| 操作溫度範圍 | -40°C 至 +85°C |
| 包裝類型 | 28-pin TSOP II |
| 資料保留電壓 | 2.0 V（最小值） |
| Input/Output Configuration | Bidirectional 8-bit data bus |
| 耗電量 | 60 mW (typical) |
| 介面 | 異步 SRAM |
CY62126DV30L-55ZIT Key Features
- Fast 55 ns access time: Enables quick read/write cycles, minimizing latency in data-intensive applications.
- Low voltage operation at 3.0 V: Supports energy-efficient designs, reducing overall power consumption without sacrificing performance.
- Wide industrial temperature range (-40 ??C to +85 ??C): Ensures reliable operation in harsh environments and industrial-grade applications.
- Compact 28-pin TSOP II package: Offers space-saving integration for high-density circuit boards while maintaining easy handling and mounting.
- 待機電流低： Helps extend system battery life in portable and power-sensitive equipment.
- Asynchronous SRAM interface: Simplifies timing requirements for system designers, allowing flexible control over data access.
- 8 位元雙向資料匯流排： Facilitates seamless data communication with microcontrollers and processors.
CY62126DV30L-55ZIT Advantages vs Typical Alternatives
This SRAM device delivers superior speed and low power consumption compared to typical memory alternatives. Its 3.0 V operation enhances energy efficiency, while the extended industrial temperature range guarantees dependable performance in demanding environments. The compact TSOP II packaging supports high-density PCB designs, offering a balance of integration ease and robustness unmatched by larger or less power-optimized SRAMs.
暢銷產品
典型應用
- Embedded system memory buffers requiring fast and reliable temporary data storage to maintain system responsiveness and integrity in real-time processing.
- Cache memory for industrial controllers, where low latency access is critical for high-speed data handling and control algorithms.
- Networking equipment, providing quick data access and buffering to support high-throughput communications.
- Portable instrumentation, leveraging low standby current and compact packaging to extend battery life while saving PCB space.
CY62126DV30L-55ZIT Brand Info
The CY62126DV30L-55ZIT is part of a proven family of SRAM products known for their reliability and performance in industrial and embedded markets. Designed and manufactured under stringent quality controls, this device embodies the brand??s commitment to delivering memory solutions that meet the rigorous demands of modern electronics design. Its robust feature set and optimized specifications reflect extensive semiconductor engineering expertise, making it a trusted choice for engineers and sourcing specialists worldwide.
常見問題
What voltage levels does this SRAM support for operation and data retention?
The device operates at a nominal voltage of 3.0 V with a tolerance of ??0.3 V, ensuring stable performance. For data retention during power-down modes,
