2N4235-Transistor NPN Power Amplifier Transistor in TO-66 Metal Can Package by ON Semiconductor

  • This transistor amplifies electrical signals, enabling efficient switching and control in various circuits.
  • Featuring a high current capacity, it supports demanding loads without compromising performance.
  • Its compact package design allows for board-space savings, ideal for dense electronic assemblies.
  • Commonly used in power regulation circuits, it ensures stable voltage control under varying conditions.
  • Manufactured under strict quality processes, it offers consistent reliability for long-term operation.
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2N4235-Transistor Overview

The 2N4235 transistor is a high-voltage, NPN bipolar junction transistor designed for power amplification and switching applications. It offers robust performance with a breakdown voltage rating suitable for demanding industrial environments. With its medium power handling capability and reliable gain characteristics, this device ensures efficient signal amplification and switching in audio, power management, and motor control circuits. The transistor’s design supports stable operation under varying load conditions, making it a versatile choice for engineers and sourcing specialists seeking dependable components. For more detailed technical data and sourcing options, visit IC 製造商.

2N4235-Transistor Technical Specifications

參數 規格
Type NPN 雙極結電晶體
集電極-發射器電壓 (V執行長) 100 V
集電極電流 (IC) 5 A (max)
功率耗散 (PD) 75 W (max)
增益頻寬乘積 (fT) Not specified (typical for power transistor)
直流電流增益 (hFE) 40 to 160 (varies with current)
Transition Frequency
包裝類型 TO-3 金屬罐
Operating Junction Temperature -65??C to +200??C

2N4235-Transistor Key Features

  • High voltage rating: With a collector-emitter voltage of up to 100 V, this transistor can handle demanding power applications reliably.
  • Robust current capacity: Supports collector currents up to 5 A, enabling efficient control of medium power loads in switching and amplification circuits.
  • TO-3 package: The metal can design allows excellent heat dissipation for enhanced reliability and longevity under stress.
  • Wide temperature range: Operational stability from -65??C to +200??C ensures functionality in harsh industrial environments.

典型應用

  • Power amplification in audio equipment where stable gain and voltage handling are critical for sound fidelity and output power.
  • Industrial motor control circuits requiring reliable switching of moderate power loads.
  • Power supply regulation and switching applications that benefit from robust voltage and current ratings.
  • General-purpose medium-power switching in automotive and industrial systems demanding durable semiconductors.

2N4235-Transistor Advantages vs Typical Alternatives

This transistor provides a compelling advantage in applications requiring high voltage and moderate current handling within a reliable TO-3 package. Compared to typical low-power transistors, it offers superior power dissipation and enhanced thermal management. Its high breakdown voltage and broad operating temperature range ensure stable operation in demanding environments, making it a preferred choice over alternatives with lower voltage ratings or plastic packages lacking similar heat dissipation capabilities.

2N4235-Transistor Brand Info

The 2N4235 is a classic industrial-grade transistor originally developed by manufacturers such as Texas Instruments and Motorola, now produced under various semiconductor brands specializing in power transistors. Its TO-3 metal can package and robust specifications have made it a staple in power amplification and switching circuits since its introduction. Many distributors and IC suppliers continue to stock this proven device due to its reliability and well-documented performance in industrial applications.

常見問題

What type of transistor is the 2N4235 and what package does it use?

The 2N4235 is an NPN bipolar junction transistor (BJT) housed in a TO-3 metal can package. This packaging supports high power dissipation and effective heat management, suitable for industrial applications.

What are the maximum voltage and current ratings for this transistor?

This device supports a maximum collector-emitter voltage of 100 volts and a collector current up to 5 amperes, making it suitable for medium power switching and amplification tasks.

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