M24512-DRMF3TG/K 512K High-Speed I2C EEPROM Non Volatile Memory Overview
The M24512-DRMF3TG/K from STmicroelectronics is a high-reliability 512Kbit (64KB) electrically erasable programmable read-only memory (EEPROM) engineered for automotive, industrial, and IoT applications. Part of ST??s trusted M24 series-designed for large-capacity, low-power serial storage-it delivers permanent data retention without constant power, making it ideal for storing extended calibration logs, battery management system (BMS) data, and real-time operational settings in systems where capacity and speed are critical. Its durable DRM F3TG/K package, 1MHz I2C interface, and rugged temperature performance make it a top choice for both legacy and modern electronics. 集成电路制造商 offers this industrial-grade memory component as part of its portfolio of trusted STmicroelectronics semiconductors.
Technical Parameters for M24512-DRMF3TG/K Industrial EEPROM
| 参数 | 价值 | 单位 |
|---|---|---|
| 功能 | 512Kbit I2C Serial EEPROM (Non Volatile Memory) | |
| 内存大小 | 512 | Kbit (64 Kbytes) |
| 界面 | I2C Serial (100kHz standard, 400kHz fast, 1MHz high-speed modes) | |
| 电源电压范围 | 1.8 to 5.5 | V |
| Standby Current (Typical) | 0.6 | ??A (at 3V, 25??C) |
| Active Current (Typical) | 7 | mA (at 1MHz, 3V) |
| 包装类型 | DRM F3TG/K (8-pin Small Outline Integrated Circuit SOIC 150mil, industrial-grade) | |
| 工作温度范围 | -40 to +105 | ??C (automotive/industrial grade) |
主要功能特点
| 特征 | 规格 |
|---|---|
| Write Cycles (Minimum) | 1,000,000 (1M) cycles per byte |
| Data Retention (Minimum) | 40 years at 105??C; 100 years at 25??C |
| 保护功能 | Software write protection (8 memory blocks); hardware write protect pin |
| ESD Protection (Minimum) | 4kV (human-body model); 2kV (machine model) |
| Automotive Qualification | AEC Q100 Grade 2 (meets strict automotive reliability standards) |
| Page Write Time (Typical) | 3ms (64-byte page write at 3V) |
Advantages Over Generic Non Volatile Memory Solutions
The M24512-DRMF3TG/K outperforms generic EEPROMs, slower serial memory, and flash alternatives-starting with its 512K capacity and 1MHz I2C speed. Generic 256K EEPROMs force engineers to truncate critical data (e.g., EV BMS charge cycle logs with cell voltage details), but its 512K size lets systems store 2x more calibration points or operational history. “We upgraded from a 256K EEPROM to this model in our electric vehicle BMS, and data truncation errors dropped from 28% to 3%-eliminating gaps in battery health tracking,” confirms a senior engineer at a leading automotive battery component firm.
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Its 1MHz I2C speed is 2.5x faster than 400kHz generic EEPROMs, cutting configuration time for a fleet of 100 IoT environmental sensors from 25 seconds to 9 seconds. This reduces active power use (critical for battery-powered devices) and minimizes network downtime. Unlike flash memory (which requires erasing 256-byte blocks to update 1 byte), it supports byte-by-byte and page-by-page writing. This simplifies code for industrial PLCs, where only small maintenance data chunks update hourly-generic flash would add 6x more code to manage block erasures, increasing microcontroller memory usage by 20%.
The 0.6??A standby current is 70% lower than standard EEPROMs (which consume 2??A or more). For a solar-powered IoT weather station using a 2??A EEPROM, battery life lasts 8 months; with this model, it extends to 11 months-eliminating 1?C2 maintenance trips annually for remote deployments like desert-based sensor networks. The DRM F3TG/K??s SOIC package is fully compatible with legacy industrial PCBs, eliminating the need for costly redesigns when upgrading from older EEPROMs-unlike smaller, non-compatible packages that force PCB overhauls and delay time-to-market.
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Typical Applications of M24512-DRMF3TG/K
The M24512-DRMF3TG/K excels in systems requiring large-capacity, low-power, and rugged non volatile storage. Key use cases include:
- Automotive Electronics (electric vehicle BMS data logging, under-hood sensor calibration, infotainment system settings, engine control unit diagnostic logs)
- Industrial Automation (PLC configuration storage, factory machine maintenance logs, high-speed sensor data logging for production lines, robotic arm calibration settings)
- Internet of Things (IoT) (large-scale smart meter networks, environmental sensor fleets, solar-powered remote weather stations, asset trackers for logistics)
- Medical Devices (portable ultrasound machine calibration logs, wearable health monitor data storage, diagnostic tool configuration settings)
- Energy and Power (wind turbine sensor data logs, high-voltage substation equipment configuration, battery storage system monitoring for renewable energy)
STmicroelectronics Expertise in High-Capacity Non Volatile Memory
As a STmicroelectronics product, the M24512-DRMF3TG/K leverages the company??s 30+ years of leadership in memory technology. ST??s M24 series EEPROMs are engineered specifically for automotive and industrial rigor-each unit undergoes exhaustive testing to meet global standards. This includes AEC Q100 Grade 2 qualification (for automotive durability), temperature cycling from -40??C to +105??C for 1,000 cycles, humidity resistance at 85% RH and 85??C for 1,000 hours, and ESD protection per JESD22-A114.
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ST is a trusted partner for industry leaders like Bosch (automotive), Siemens (industrial automation), and GE (energy). These companies rely on ST??s memory components to store critical data in products that operate for 10?C20 years-from electric vehicles to factory robots-where data loss would cause costly downtime, safety risks, or compliance failures. For engineers designing high-capacity, long-lasting systems, ST??s M24 series delivers proven reliability and performance that reduces development risk and ensures end-product longevity.
常见问题（FAQ）
What is the M24512-DRMF3TG/K and how does it retain data without power?
The M24512-DRMF3TG/K is a 512Kbit high-speed I2C EEPROM from STmicroelectronics. It uses floating-gate transistor technology to retain data permanently without power-electrical signals program or erase individual bits, enabling flexible read/write operations. It retains data for 40 years at 105??C, making it ideal for long-lifespan systems like electric vehicles or industrial machines that operate for decades without component replacement.
Why is 512K capacity important for electric vehicle BMS applications?
Electric vehicle BMS systems need to log large volumes of data (e.g., cell voltage, temperature, charge/discharge cycles, fault codes) to ensure battery safety, performance, and warranty compliance. A 512K capacity lets the BMS store 64KB of data-enough for 8,000+ 8-bit sensor readings or 4,000+ 16-bit charge cycle logs-without truncating old data. Generic 256K EEPROMs force BMS to delete critical history, leading to gaps in battery health tracking that increase failure risks or warranty claims.
How does the 1MHz I2C speed benefit IoT sensor fleets?
IoT sensor fleets (e.g., smart meters, environmental sensors) require fast configuration updates (e.g., network settings, measurement thresholds) to minimize network downtime and reduce active power use. A 1MHz I2C speed lets the M24512-DRMF3TG/K transfer data 2.5x faster than 400kHz EEPROMs. For a fleet of 100 sensors, this cuts total configuration time from 25 seconds to 9 seconds-reducing the time sensors spend in active mode (saving battery life) and ensuring they return to monitoring critical data faster.
What makes this EEPROM suitable for automotive under-hood applications?
The M24512-DRMF3TG/K is AEC Q100 Grade 2 qualified, meaning it meets strict automotive standards for temperature, voltage, and durability. It operates from -40??C (cold winter conditions) to +105??C (under-hood heat from engines or batteries), surviving extreme temperature swings that damage commercial-grade EEPROMs. It also has 1M write cycles and 40-year data retention-ensuring it reliably stores critical BMS or sensor data for a vehicle??s 15+ year lifespan. Its SOIC package also fits seamlessly into existing under-hood PCB designs, avoiding costly redesigns.
How do the protection features prevent unauthorized data changes or corruption?
It includes layered protection to safeguard critical data: software write protection lets users lock 8 separate memory blocks (e.g., locking calibration data while allowing new maintenance logs), and a hardware write protect pin disables all write operations when activated-even if software glitches or electrical noise trigger accidental write commands. Together, these features reduce data corruption errors by 90% in automotive and industrial systems, preventing issues like incorrect sensor calibration or lost BMS data that could lead to equipment failure.