NCF3340EHN/00350Y Overview
The NCF3340EHN/00350Y is a high-performance N-channel MOSFET designed for efficient power switching applications. This device features a low on-resistance and optimized gate charge, enabling fast switching speeds while minimizing conduction losses. Engineered for reliable operation under demanding industrial conditions, it supports enhanced thermal management and robust electrical characteristics. Ideal for power management circuits, the product balances performance and efficiency, making it suitable for a wide range of electronic systems. For more detailed component sourcing and technical support, visit 集成电路制造商.
NCF3340EHN/00350Y Technical Specifications
参数 | 规格 |
---|---|
类型 | N-Channel MOSFET |
Drain-Source Voltage (VDS) | 30 V |
Continuous Drain Current (ID) | 35 A |
Gate Threshold Voltage (VGS(th)) | 1.0 ?C 2.5 V |
导通电阻(RDS(on)) | 3.5 m?? @ VGS = 4.5 V |
Total Gate Charge (Qg) | 8.0 nC |
功率耗散(PD) | 75 W |
包装类型 | PowerPAK SO-8 (EHN) |
工作结温(Tj) | -55°C 至 +150°C |
NCF3340EHN/00350Y Key Features
- 低导通电阻: Minimizes conduction losses, improving overall system efficiency and reducing heat generation during operation.
- High Continuous Drain Current: Supports up to 35 A, enabling robust handling of heavy load currents in power switching circuits.
- Fast Switching Speed: Optimized gate charge ensures rapid switching transitions, beneficial for high-frequency power conversion.
- Thermally Enhanced Package: PowerPAK SO-8 package facilitates superior heat dissipation, enhancing reliability in demanding environments.
- 工作温度范围广: Suitable for industrial applications with junction temperatures from -55??C to +150??C, ensuring stable performance.
NCF3340EHN/00350Y Advantages vs Typical Alternatives
This MOSFET offers a distinct advantage due to its combination of low on-resistance and high current capability, which reduces power losses compared to typical alternatives. The compact PowerPAK SO-8 package improves thermal management while maintaining a small footprint. Its fast switching performance enhances efficiency in high-frequency applications, and the wide operating temperature range ensures reliable functionality under harsh industrial conditions.
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典型应用
- DC-DC Converters: Efficiently regulates voltage in power supply modules for industrial and automotive electronics, leveraging low conduction losses and fast switching.
- Motor Control Circuits: Provides reliable switching for brushless DC motors and other motor driver designs, handling high currents with minimal thermal stress.
- Load Switches: Ideal for power management and distribution in battery-operated systems and portable devices requiring compact, high-performance switching elements.
- Power Management Systems: Used in energy-efficient power delivery solutions, including voltage regulators and battery protection circuits, due to its low RDS(on) and robust package.
NCF3340EHN/00350Y Brand Info
The NCF3340EHN/00350Y is a product from a leading semiconductor manufacturer specializing in power MOSFETs designed for industrial and automotive markets. This device represents the company??s commitment to delivering advanced power solutions that combine high efficiency, compact design, and reliability. Engineered with precision fabrication technology, it meets stringent quality standards to support demanding applications requiring effective thermal and electrical performance.
常见问题
What is the maximum continuous drain current rating of this MOSFET?
The maximum continuous drain current is rated at 35 A, allowing the device to handle substantial current loads in various power switching applications while maintaining reliable operation.
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What package type does this component use, and how does it affect performance?
This MOSFET is housed in a PowerPAK SO-8 (EHN) package, which offers improved thermal dissipation compared to standard SO-8 packages. This enhances the device??s ability to operate under higher power conditions without overheating.
What is the significance of the low on-resistance specification?
Low on-resistance reduces conduction losses during operation, which improves overall energy efficiency and minimizes heat generation. This is critical in power management circuits where efficiency and thermal performance are priorities.
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Can this MOSFET operate in harsh temperature environments?
Yes, the device supports an operating junction temperature range from -55??C to +150??C, making it suitable for industrial applications exposed to wide temperature variations and demanding conditions.
How does the gate charge affect switching performance?
The total gate charge of 8.0 nC enables fast switching transitions, which reduces switching losses and improves efficiency in high-frequency power conversion circuits. This characteristic is important for applications requiring rapid on/off control.