JANSU2N3057A-Transistor Overview
The JANSU2N3057A is a robust bipolar junction transistor (BJT) designed for medium power amplification and switching applications. It offers reliable performance with a collector-emitter voltage rating suitable for various industrial environments. Engineered with a silicon NPN structure, this transistor supports moderate current and voltage requirements, making it ideal for audio amplifiers, power regulators, and general-purpose switching circuits. Its TO-3 metal case packaging ensures enhanced heat dissipation and durability under demanding operating conditions. This device is widely adopted by engineers and sourcing specialists seeking dependable semiconductor components. For more information, visit 集成电路制造商.
JANSU2N3057A-Transistor Key Features
- High Collector-Emitter Voltage: Supports up to 60 V, enabling operation in medium-voltage circuits with ample safety margins.
- Continuous Collector Current: Handles up to 15 A, allowing efficient power amplification and switching in industrial applications.
- TO-3 Metal Case Package: Provides excellent thermal conductivity for improved heat dissipation and operational reliability.
- Gain Bandwidth Product: Suitable for moderate frequency applications, ensuring stable amplification across common audio and control frequencies.
JANSU2N3057A-Transistor Technical Specifications
| 参数 | 价值 | 单位 |
|---|---|---|
| 集电极-发射极电压（V首席执行官) | 60 | V |
| 集电极-基极电压（VCBO) | 100 | V |
| 发射极-基极电压（VEBO) | 5 | V |
| Continuous Collector Current (IC) | 15 | A |
| Peak Collector Current (ICM) | 20 | A |
| 功率耗散（P总计) | 115 | W |
| 直流电流增益 (hFE) | 20?C70 | ?C |
| 转换频率（fT) | 3 | 兆赫 |
| Junction Temperature (TJ) | 200 | ??C |
| 包装类型 | TO-3 Metal Can | ?C |
JANSU2N3057A-Transistor Advantages vs Typical Alternatives
This transistor delivers a superior balance of high current capability and voltage tolerance compared to common BJTs in similar classes. Its metal TO-3 package enhances heat dissipation, boosting reliability under continuous power loads. The device’s moderate gain bandwidth supports stable operation in audio and power switching circuits where precision and durability are essential. These attributes make it a preferred choice for engineers requiring rugged, long-lasting semiconductors with dependable electrical performance.
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典型应用
- Audio power amplifiers requiring medium power handling and stable gain for clear sound reproduction in industrial or consumer electronics.
- Power regulation circuits where reliable switching and voltage handling maintain system stability under variable loads.
- Motor control circuits benefiting from robust current capacity and thermal dissipation to ensure continuous operation.
- General-purpose switching in industrial automation systems where ruggedness and durability are critical.
JANSU2N3057A-Transistor Brand Info
The JANSU2N3057A transistor is a standard offering within the JANSU lineup of semiconductor devices, known for dependable performance and industrial-grade reliability. This product integrates proven silicon NPN transistor technology with rugged packaging, meeting the demands of power amplification and switching in harsh environments. The brand emphasizes quality manufacturing processes and thorough testing to ensure consistent device behavior, making it a trusted choice for engineers and procurement professionals sourcing reliable power transistors.
常见问题
该晶体管的最大集电极额定电流是多少？
The maximum continuous collector current for this device is 15 amperes, supporting medium-power applications. It can handle short peak currents up to 20 amperes, which is useful for transient load conditions.
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What type of package does the transistor use, and why is it important?
This transistor is housed in a TO-3 metal can package, which offers excellent thermal conductivity. This packaging helps dissipate heat effectively, improving reliability and allowing the device to operate safely at higher power levels.
这种晶体管能否用于高频应用？
While the transistor has a transition frequency around 3 MHz, it is best suited for low to moderate frequency applications such as audio amplifiers or power switching, rather than high-frequency RF circuits.
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What voltage ratings should be considered when designing with this transistor?
The device has a maximum collector-emitter voltage rating of 60 V and a collector-base voltage of 100 V. Designers should ensure operating voltages remain within these limits to prevent breakdown and maintain device longevity.
Is this transistor suitable for industrial automation environments?
Yes, the transistor??s robust current handling, voltage ratings, and durable TO-3 packaging make it a reliable choice for industrial automation and control systems requiring stable switching and power amplification.
