JANSH2N3439U4/TR Overview
The JANSH2N3439U4/TR is a high-performance NPN bipolar junction transistor designed for medium to high power switching and amplification applications. This transistor offers robust electrical characteristics with a collector current rating suitable for demanding industrial environments. Its durable construction supports reliable operation across a wide range of voltages and currents, ensuring stable performance under fluctuating load conditions. Engineers and sourcing specialists will find this device valuable for applications requiring efficient power handling and precise signal control. For trusted sourcing and detailed technical support, visit 集成电路制造商.
JANSH2N3439U4/TR Key Features
- High Collector Current Capacity: Supports up to 10A, enabling effective handling of medium to high power loads with minimal thermal stress.
- Collector-Emitter Voltage Rating: Rated for 100V, providing flexibility in circuits requiring higher voltage tolerance.
- 低饱和电压： Ensures efficient switching with reduced power loss, enhancing overall system energy efficiency.
- Robust Gain Characteristics: Maintains consistent current gain (hFE) over a broad range of collector currents, promoting stable amplification performance.
JANSH2N3439U4/TR Technical Specifications
| 参数 | 价值 | 单位 |
|---|---|---|
| 集电极-发射极电压（V首席执行官) | 100 | V |
| 集电极电流（IC) | 10 | A |
| 功率耗散（P总计) | 115 | W |
| 增益带宽积（fT) | 100 | 兆赫 |
| 直流电流增益 (hFE) | 40?C160 | ?? |
| 集电极-基极电压（VCBO) | 120 | V |
| 发射极-基极电压（VEBO) | 5 | V |
| 工作结温（Tj) | 150 | ??C |
JANSH2N3439U4/TR Advantages vs Typical Alternatives
This transistor offers superior current handling and voltage tolerance compared to standard NPN devices, making it ideal for high-power industrial circuits. Its low saturation voltage reduces energy waste during switching, enhancing efficiency. Additionally, its stable gain over varying currents ensures reliable amplification. These benefits translate to increased system robustness and longer operational lifetime, distinguishing it from typical alternatives in similar applications.
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典型应用
- Power amplification in industrial motor control circuits, where reliable high current and voltage switching are critical for efficient operation.
- Switching regulators in power supply designs requiring efficient energy conversion and thermal stability.
- Audio amplifier stages needing consistent gain and power handling for clear, distortion-free output.
- General-purpose switching applications in automation systems that demand robust and dependable transistor performance.
JANSH2N3439U4/TR Brand Info
This transistor is part of the JAN series, known for military-grade reliability and stringent quality standards. The JANSH2N3439U4/TR variant is manufactured under controlled processes to meet demanding industrial and defense specifications. Recognized for durability and consistent electrical parameters, this device is widely trusted in applications requiring dependable switching and amplification under harsh conditions.
常见问题
该晶体管的最大集电极电流是多少？
The maximum collector current is rated at 10 amperes, which allows the transistor to handle substantial loads in power switching and amplification applications without damage.
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Can this device operate at high voltages?
Yes, it supports a collector-emitter voltage of up to 100 volts, making it suitable for circuits that operate at medium to high voltage levels.
What thermal performance can be expected from this transistor?
The device has a maximum operating junction temperature of 150??C, enabling it to perform reliably in environments with elevated temperatures typical of industrial applications.
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How does the gain characteristic affect circuit design?
The transistor maintains a DC current gain (hFE) between 40 and 160 across a broad current range, ensuring stable amplification and predictable behavior in signal processing circuits.
这种晶体管是否适合高频应用？
With a gain bandwidth product around 100 MHz, it can be used in moderately high-frequency circuits, including certain audio and switching regulator applications, though it may not be ideal for very high-frequency RF designs.
