JAN2N2920U-Dual-Transistor by JAN – High-Speed Switching Transistor, TO-220 Package

  • This dual transistor device enables efficient signal amplification, improving circuit performance in various electronic designs.
  • Featuring matched transistor pairs, it ensures consistent gain and reduces distortion in analog signal processing.
  • The compact package design offers board-space savings, facilitating integration into densely packed electronic assemblies.
  • Ideal for audio preamplifiers and switching circuits, it enhances response accuracy and overall device reliability.
  • Manufactured to meet stringent quality standards, it provides stable operation under diverse environmental conditions.
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JAN2N2920U-Dual-Transistor Overview

The JAN2N2920U dual transistor is a high-performance discrete semiconductor device designed for industrial and military applications requiring robust switching and amplification capabilities. Featuring two matched NPN transistors in a single package, this component offers superior gain characteristics and enhanced thermal stability. Its rugged design ensures reliable operation under harsh environmental conditions, making it ideal for precision analog circuits and switching applications. Engineers and sourcing specialists benefit from its consistent electrical performance, low noise, and compatibility with standard circuit topologies. For detailed specifications and sourcing, visit 集成电路制造商.

JAN2N2920U-Dual-Transistor Key Features

  • Dual matched NPN transistors: Provides precise gain matching for differential amplifier circuits, improving signal integrity and reducing circuit complexity.
  • 高电流增益 (hFE): Ensures efficient amplification with minimal power loss, critical for high-performance analog designs.
  • Wide voltage ratings: Supports collector-emitter voltages up to 40V, enabling versatile applications in various power environments.
  • Military-grade JAN (Joint Army-Navy) qualification: Guarantees enhanced reliability and ruggedness for defense and aerospace use cases.

JAN2N2920U-Dual-Transistor Technical Specifications

参数 规格
晶体管类型 NPN Dual Transistor
集电极-发射极电压 (VCEO) 40 V
集电极-基极电压 (VCBO) 60 V
发射极-基极电压 (VEBO) 5 V
集电极电流 (IC) 600 mA (max)
功率耗散 (PD) 625 毫瓦
直流电流增益 (hFE) 100 to 300 (depending on test conditions)
转换频率 (fT) 100 兆赫(典型值)
包装类型 TO-18 金属罐

JAN2N2920U-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor offers superior gain matching and thermal stability compared to standard single transistors, enhancing circuit accuracy and reliability. Its rugged military-grade certification ensures consistent performance under extreme conditions, providing sourcing specialists with a dependable component for critical applications. Additionally, the integrated dual-transistor structure simplifies PCB layout and reduces component count, resulting in more compact and cost-effective designs.

典型应用

  • Precision differential amplifier circuits where matched transistor pairs are essential for maintaining signal balance and minimizing distortion in analog signal processing.
  • Switching circuits requiring reliable high-gain transistors capable of handling moderate collector currents with stable performance.
  • Military and aerospace systems demanding rugged components with proven environmental resilience and strict quality standards.
  • General-purpose amplification in instrumentation and control equipment that benefits from the dual transistor??s compact footprint and matched characteristics.

JAN2N2920U-Dual-Transistor Brand Info

The JAN2N2920U dual transistor is a military-qualified product manufactured under stringent quality control processes to meet the demanding requirements of defense and aerospace sectors. The JAN (Joint Army-Navy) designation signifies compliance with rigorous standards for reliability, environmental tolerance, and performance. This dual transistor is produced by a trusted semiconductor supplier known for delivering consistent and long-lasting components tailored for high-reliability industrial applications.

常见问题

What does the ??JAN?? designation in JAN2N2920U signify?

The ??JAN?? prefix indicates that the transistor meets military standards set by the Joint Army-Navy program. This means it has undergone rigorous testing for reliability, environmental stability, and performance consistency, making it suitable for defense and aerospace applications.

Can the dual transistor be used in high-frequency amplifier circuits?

Yes, with a typical transition frequency around 100 MHz, this dual transistor is well-suited for medium to high-frequency amplifier circuits, providing efficient gain and low noise characteristics required in such designs.

What is the maximum collector current for this device?

The maximum collector current rating of the transistor is 600 mA, which allows it to handle moderate power loads in switching and amplification applications without compromising reliability.

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How does using a dual transistor benefit circuit design?

Utilizing a dual transistor simplifies circuit layouts by integrating two matched transistors within a single package. This reduces component count, improves thermal tracking, and enhances gain matching, which is critical in differential and analog circuits.

Is this device suitable for commercial electronics applications?

While designed primarily for military use, the transistor??s robust specifications and reliable performance also make it a suitable choice for demanding industrial and commercial electronics requiring high stability and precision.

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