JAN2N2484UA/TR Overview
The JAN2N2484UA/TR is a high-performance NPN bipolar junction transistor designed for robust switching and amplification applications in industrial and military systems. Engineered to meet stringent military standards, this transistor offers reliable operation under harsh environmental conditions, ensuring long-term stability and precision. Its high gain and low noise characteristics make it ideal for use in signal amplification, power regulation, and control circuits. The device??s rugged construction and consistent electrical parameters provide engineers and sourcing specialists with a dependable solution for critical applications requiring both performance and durability. For more detailed technical data, visit 集成电路制造商.
JAN2N2484UA/TR Key Features
- Military-grade reliability: The transistor is built to comply with JAN (Joint Army-Navy) specifications, assuring dependable operation in extreme temperature and vibration environments.
- 高电流增益 (hFE)： Provides enhanced amplification efficiency, enabling improved signal integrity and reduced distortion in analog circuits.
- Low noise figure: Minimizes signal interference, critical for sensitive RF and audio frequency applications.
- Robust TO-18 metal can package: Ensures excellent thermal conductivity and mechanical protection, enhancing device longevity and integration ease.
JAN2N2484UA/TR Technical Specifications
| 参数 | 价值 | 单位 |
|---|---|---|
| 集电极-发射极电压 (VCEO) | 30 | V |
| 集电极-基极电压 (VCBO) | 40 | V |
| 发射极-基极电压 (VEBO) | 5 | V |
| 集电极电流 (IC) | 200 | 毫安 |
| 功率耗散 (Ptot) | 300 | 毫瓦 |
| 直流电流增益 (hFE) | 40 to 300 | ?? |
| 转换频率 (fT) | 100 | 兆赫 |
| 工作温度范围 | -55至+125 | ??C |
JAN2N2484UA/TR Advantages vs Typical Alternatives
This transistor offers enhanced stability and performance compared to standard commercial equivalents due to its rigorous JAN military qualification. Its wide operating temperature range and superior gain characteristics improve circuit sensitivity and reliability, particularly in demanding industrial and defense applications. The robust metal package supports better thermal management and mechanical endurance, making it a preferred choice where long-term reliability and precise electronic control are critical.
🔥 畅销产品
典型应用
- Signal amplification in communication and radar systems, where low noise and high gain are essential for accurate data transmission.
- Switching elements in power regulation circuits requiring dependable operation over wide temperature ranges.
- Audio frequency amplification, benefiting from low distortion and stable gain parameters.
- Military and aerospace electronic assemblies demanding components with proven ruggedness and consistent performance.
JAN2N2484UA/TR Brand Info
The JAN2N2484UA/TR is produced under strict military standards, ensuring quality and reliability for high-reliability sectors. The JAN prefix indicates compliance with Joint Army-Navy specifications, reflecting a legacy of rugged components designed for defense and aerospace industries. This transistor is part of a family known for precision manufacturing and consistent electrical characteristics, trusted by engineers for critical system designs requiring dependable semiconductor solutions.
常见问题
该晶体管的最大集电极额定电流是多少？
The maximum collector current (IC) for this transistor is specified at 200 milliamperes. This rating ensures the device can handle moderate power loads suitable for switching and amplification tasks in industrial circuits without degradation.
🌟 特色产品
Can this transistor operate reliably in extreme temperature conditions?
Yes, this transistor is qualified to operate over a temperature range from -55??C to +125??C, meeting military-grade requirements for performance in harsh environmental conditions, including extreme cold and heat.
What package type does the JAN2N2484UA/TR use, and why is it important?
The device is housed in a TO-18 metal can package, which offers excellent thermal conductivity and mechanical protection. This packaging is crucial for maintaining stable operation and heat dissipation in demanding applications.
📩 联系我们
How does the current gain (hFE) range affect circuit design?
The DC current gain of 40 to 300 provides designers with flexibility to optimize amplification stages. A higher gain facilitates better signal amplification, while the specified range ensures consistent and predictable transistor behavior.
这种晶体管是否适合高频应用？
With a transition frequency (fT) of approximately 100 MHz, the transistor supports moderate high-frequency operation, making it well-suited for RF amplification and other applications requiring fast switching and low noise.
