LND150N3-G N-Channel MOSFET Transistor, 3-Pin SOT-23 Package

LND150N3-G Overview

The LND150N3-G is a high-performance N-channel power MOSFET designed for efficient switching and robust power management in industrial electronics. Featuring a low on-resistance and fast switching capabilities, this device excels in applications demanding high current handling with minimal power loss. Its optimized structure ensures reliable operation under thermal stress, making it suitable for power conversion, motor control, and other energy-sensitive designs. Sourced from a reputable IC Üreticisi, the component balances performance and durability, addressing the needs of engineers and sourcing specialists in demanding environments.

LND150N3-G Technical Specifications

Parametre	Değer	Birim
Drain-Source Voltage (VDS)	30	V
Continuous Drain Current (ID)	6.3	A
Gate Threshold Voltage (VGS(th))	1.0 ?C 3.0	V
On-Resistance (RDS(açık))	0.045	??
Total Gate Charge (Qg)	9.0	nC
Input Capacitance (Ciss)	2000	pF
Güç Tüketimi (PD)	1.25	W
Çalışma Bağlantı Sıcaklığı (TJ)	-55 ila 150	??C

LND150N3-G Key Features

• Low On-Resistance: Minimizes conduction losses, enabling higher efficiency in power switching applications.
• Hızlı Anahtarlama Hızı: Reduces switching losses and improves overall system responsiveness in high-frequency circuits.
• Sağlam Termal Performans: Supports operation up to 150??C junction temperature, ensuring reliability in harsh environments.
• High Current Capability: Handles continuous drain currents up to 6.3A, suitable for moderate power loads.

LND150N3-G Advantages vs Typical Alternatives

This power MOSFET delivers superior efficiency through its low on-resistance and rapid switching characteristics compared to typical devices in its class. Its robust thermal tolerance and moderate current rating offer reliable performance in industrial systems while maintaining compact device dimensions. These qualities translate to better power management, reduced heat dissipation, and enhanced system integration, making it a preferred choice over less optimized alternatives.

Tipik Uygulamalar

• DC-DC converters and power management circuits requiring efficient switching to minimize energy loss and heat generation in compact designs.
• Motor control circuits where fast switching and reliable current handling ensure precise and stable operation.
• Load switching applications that benefit from low on-resistance to reduce power dissipation during conduction.
• General-purpose power switching in industrial equipment demanding robust performance and thermal reliability.

LND150N3-G Brand Info

This MOSFET is offered by a leading semiconductor manufacturer known for delivering high-quality power devices tailored to industrial electronics applications. The product line focuses on combining efficiency, reliability, and consistent performance, meeting rigorous standards for power management components. This model exemplifies the brand??s commitment to providing components that support advanced energy control solutions and robust electrical designs.

SSS

What is the maximum drain-source voltage rating for this device?

The maximum drain-source voltage is rated at 30 volts, making it suitable for low- to medium-voltage power applications where efficient switching is required without compromising device integrity.

How does the low on-resistance benefit circuit performance?

A low on-resistance reduces conduction losses during operation, which translates to improved efficiency and lower heat generation. This characteristic is critical in power-sensitive designs to maintain energy savings and ensure longer device lifetime.

What is the typical operating temperature range for this MOSFET?

The device supports a junction temperature range from -55??C up to 150??C, allowing it to function reliably in environments with significant thermal variation, including demanding industrial settings.

Can this MOSFET handle continuous high current loads?

Yes, it can handle continuous drain currents up to 6.3 amperes, which makes it appropriate for moderate power applications such as motor drivers and power converters where steady current flow is required.

What is the significance of the total gate charge in switching performance?

The total gate charge, measured at 9.0 nanocoulombs, affects the switching speed and the drive requirements of the MOSFET. Lower gate charge allows for faster switching and reduces the power needed to drive the gate, enhancing overall circuit efficiency.