IPB031N08N5ATMA1 N-Channel MOSFET, 80V, 100A, TO-220 Package

  • Serves as an N-channel MOSFET, enabling efficient switching and power control in electronic circuits.
  • Features a low RDS(açık) value, which helps minimize conduction losses and improve energy efficiency.
  • Comes in a compact SuperSO8 package, saving board space and supporting high-density designs.
  • Suitable for use in power management applications, enhancing performance in DC-DC converters and motor drives.
  • Manufactured to support consistent operation and reliable performance across a range of environments.
Infineon logosu
产品上方询盘

IPB031N08N5ATMA1 Overview

The IPB031N08N5ATMA1 is a high-performance N-channel MOSFET optimized for demanding industrial and automotive power-switching applications. This device delivers low on-resistance and robust voltage handling in a compact TO-220 package, making it ideal for efficient, high-current designs where thermal management and reliability are critical. With advanced silicon technology, it offers enhanced energy efficiency and fast switching capabilities, supporting engineers in building power supplies, motor drives, and inverter systems that require both reliability and performance. For more details, visit IC Üreticisi.

IPB031N08N5ATMA1 Technical Specifications

Parametre Değer
Transistor Polarity N-Channel
Drain-Source Voltage (Vds) 80 V
Continuous Drain Current (Id) 120 A
Drain-Source On-Resistance (Rds(on)) 3.1 m??
Kapı Yükü (Qg) 160 nC
Güç Dağıtımı (Pd) 300 W
Paket TO-220
Çalışma Sıcaklık Aralığı -55??C to 175??C

IPB031N08N5ATMA1 Key Features

  • Ultra-low on-resistance ensures minimal power loss, boosting overall system efficiency in high-current circuits.
  • High current capability supports demanding loads, making it suitable for motor control and power switching applications.
  • Wide operating temperature range increases reliability in harsh industrial and automotive environments.
  • Robust 80 V drain-source voltage rating provides headroom for transients and system-level protection.
  • Fast switching performance enables use in high-frequency power conversion designs.
  • Standard TO-220 package simplifies integration and thermal management for existing PCB layouts.

IPB031N08N5ATMA1 Advantages vs Typical Alternatives

This device stands out from standard MOSFETs by combining a very low Rds(on) value with high current handling in a widely used TO-220 package. The result is superior energy efficiency, reduced heat generation, and reliable operation under demanding conditions??key factors for power supply and motor drive designers seeking dependable, high-performance solutions.

Tipik Uygulamalar

  • High-efficiency power supplies: The low on-resistance and high current rating make it an excellent choice for switched-mode power supply (SMPS) designs requiring minimized conduction losses and robust performance.
  • Motor control circuits: Ideal for driving inductive loads in both industrial automation and automotive environments, where reliability and efficiency are essential.
  • DC-DC converters: Supports high current and fast switching, enabling compact and efficient voltage regulation modules.
  • Inverter systems: Suitable for use in solar inverters and uninterruptible power supplies (UPS), delivering stable, reliable switching in demanding scenarios.

IPB031N08N5ATMA1 Brand Info

This MOSFET is part of a trusted product lineup designed for professionals who demand high efficiency and durability. The device leverages advanced semiconductor manufacturing processes to deliver reliable switching, low conduction losses, and extended operational lifespans. Its integration into the TO-220 package offers a familiar and versatile form factor, supporting both legacy and new designs in industrial and automotive applications.

SSS

What is the maximum continuous drain current supported by this MOSFET?

The device is rated for a maximum continuous drain current of 120 A, allowing it to manage substantial power loads in industrial and automotive circuits without compromising efficiency or safety.

Which package type does this product use, and why is it beneficial?

It comes in a TO-220 package, which is widely regarded for its excellent thermal performance, ease of mounting, and compatibility with standard heatsinks, making it a practical choice for high-power designs.

How does the device??s low Rds(on) value improve system efficiency?

A low drain-source on-resistance of 3.1 m?? significantly reduces conduction losses, resulting in lower heat generation and increased energy efficiency, which is critical for high-current applications.

📩 Bize Ulaşın

产品中间询盘

Can this MOSFET operate in harsh environments?

Yes, its operating temperature range from -55??C to 175??C ensures reliable performance in a variety of challenging settings, including industrial automation and automotive systems.

Is the IPB031N08N5ATMA1 suitable for fast switching applications?

Absolutely. Its fast switching capability and optimized gate charge make it ideal for high-frequency applications, such as DC-DC converters and inverter circuits, where rapid response times are essential.

Uygulama

, ,

Maliyet ve zamandan tasarruf edin

Hızlı küresel teslimat

Orijinal parça garantili

Uzman satış sonrası destek

Daha İyi Bir Fiyat mı Arıyorsunuz?