IPB020N10N5LFATMA1 N-Channel MOSFET, 100V 200A, TO-220 Package

IPB020N10N5LFATMA1 Overview

The IPB020N10N5LFATMA1 is a high-performance N-channel MOSFET designed for demanding industrial and automotive switching applications. Featuring enhanced low on-resistance and robust voltage handling, this device is optimized for efficient power conversion and control. With its advanced trench technology and thermally efficient D2PAK package, it supports reliable operation in high-current environments. Engineers and sourcing specialists will appreciate its balance of switching speed, power loss reduction, and rugged construction, making it suitable for DC-DC converters, motor drives, and power management systems. For more details, visit IC Üreticisi.

IPB020N10N5LFATMA1 Technical Specifications

Öznitelik	Değer
Transistör Tipi	N-Channel MOSFET
Drain-Source Voltage (VDS)	100 V
Continuous Drain Current (ID)	120 A
RDS(açık) (Max) @ VGS = 10V	2.0 m??
Gate Charge (Qg)	132 nC
Package / Case	D2PAK (TO-263-3)
Çalışma Sıcaklık Aralığı	-55??C to +175??C
Montaj Tipi	Yüzey Montajı

IPB020N10N5LFATMA1 Key Features

• Ultra-low R_DS(açık) of just 2.0 m?? ensures minimal conduction losses, translating to higher efficiency in power switching circuits.
• High current handling capability (up to 120 A continuous) supports robust operation in high-power industrial and automotive systems.
• 100 V drain-source voltage rating provides reliable voltage margin for automotive and industrial bus voltages.
• Trench MOSFET technology delivers fast switching performance, reducing switching losses and improving overall system response.
• Thermally efficient D2PAK surface-mount package enables excellent heat dissipation, critical for dense PCB designs and compact power modules.
• Wide operating temperature range from -55??C to +175??C increases reliability in harsh environments.

IPB020N10N5LFATMA1 Advantages vs Typical Alternatives

This device offers a superior combination of ultra-low on-resistance and high current capability compared to standard MOSFETs in its class. The advanced trench structure ensures reduced switching and conduction losses, boosting efficiency. Its robust voltage rating and wide temperature range provide increased reliability for demanding industrial and automotive applications. The D2PAK form factor supports high thermal performance, simplifying integration into compact designs.

Tipik Uygulamalar

• Power management in automotive ECUs and electric drive systems, where high efficiency and thermal reliability are essential for system stability and energy savings.
• DC-DC converters in industrial and telecom equipment, enabling efficient voltage regulation with minimal heat generation for prolonged component life.
• Motor control circuits, providing fast and reliable switching for precise speed and torque management in automation and robotics.
• Switching power supplies, supporting high-frequency operation with low losses, ideal for compact and energy-efficient power delivery systems.

IPB020N10N5LFATMA1 Brand Info

The IPB020N10N5LFATMA1 is part of a leading family of power semiconductors recognized for their efficiency and reliability in industrial and automotive markets. Developed using advanced trench MOSFET technology, this product stands out for its low on-resistance and high current handling. Its D2PAK package enhances thermal management, making it a preferred solution for engineers seeking dependable performance in high-power density applications.

SSS

What makes the IPB020N10N5LFATMA1 suitable for automotive and industrial power designs?

Its combination of a high continuous drain current rating, wide operating temperature range, and robust 100 V voltage tolerance supports use in demanding automotive and industrial environments, ensuring reliable long-term operation in harsh conditions.

How does the low R_DS(açık) benefit overall system efficiency?

The ultra-low R_DS(açık) minimizes conduction losses during switching, which directly reduces heat generation and improves the efficiency of power conversion systems, making it ideal for energy-sensitive applications.

What are the advantages of the D2PAK package for this device?

The D2PAK (TO-263-3) surface-mount package offers excellent thermal performance and mechanical stability, supporting high-current operation and simplifying heat management in compact PCB layouts.

Is this MOSFET suitable for fast switching applications?

Yes, the advanced trench technology and optimized gate charge allow for fast switching, which is crucial for power supplies, motor drives, and DC-DC converters requiring rapid response and low switching losses.

Can the IPB020N10N5LFATMA1 be used in high-temperature environments?

Absolutely. With an operating temperature range from -55??C up to +175??C, this device is engineered for reliability in environments where thermal stress is a major consideration, such as automotive engine bays and industrial machinery.