HMC219BMS8GE Phase Shifter IC 0.5?? Steps in 8-Pin MSOP Package

HMC219BMS8GE Overview

The HMC219BMS8GE is a high-performance, low-noise monolithic microwave integrated circuit (MMIC) amplifier designed for broadband applications from 0.1 GHz to 10 GHz. It delivers a gain of approximately 15 dB with a noise figure as low as 2.0 dB, making it ideal for sensitive RF front-end designs. Packaged in a compact 8-lead MSOP, the device supports single-supply operation at +5 V with low current consumption, optimizing power efficiency. Suitable for radar, communication systems, and instrumentation, the HMC219BMS8GE offers robust gain flatness and excellent input/output return loss. For detailed technical insights and sourcing, visit IC Üreticisi.

HMC219BMS8GE Technical Specifications

Parametre	Şartname
Frekans Aralığı	0.1 GHz to 10 GHz
Kazanç	15 dB (tipik)
Gürültü Şekli	2.0 dB (typical at 2 GHz)
Output Power (P1dB)	18 dBm (typical)
Giriş Dönüş Kaybı	?? 10 dB
Çıkış Dönüş Kaybı	?? 10 dB
Besleme Gerilimi	+5 V
Akım Tüketimi	60 mA (typical)
Paket	8 uçlu MSOP
Çalışma Sıcaklık Aralığı	-40?? C ila +85?? C

HMC219BMS8GE Key Features

• Wideband Frequency Coverage: Operates effectively from 0.1 GHz to 10 GHz, enabling use in diverse RF systems requiring broadband amplification.
• Düşük Gürültü Figürü: Provides a typical noise figure of 2.0 dB, enhancing system sensitivity and improving signal-to-noise ratio in receiver front ends.
• High Gain with Flat Response: Delivers consistent 15 dB gain across the frequency band, critical for stable system performance and minimal gain variation.
• Compact MSOP Package: The small 8-lead MSOP footprint facilitates high-density PCB layouts and integration into space-constrained designs.
• Low Current Consumption: Typical current of 60 mA at +5 V supply reduces power dissipation, supporting energy-efficient applications.
• Good Input/Output Match: Input and output return losses ?? 10 dB minimize signal reflections, improving overall system linearity and reducing insertion loss.
• Geniş Çalışma Sıcaklığı Aralığı: Reliable performance from -40??C to +85??C allows deployment in harsh industrial and outdoor environments.

HMC219BMS8GE Advantages vs Typical Alternatives

The HMC219BMS8GE stands out with its broad frequency coverage and low noise figure, enabling enhanced sensitivity compared to standard MMIC amplifiers. Its compact MSOP package and low power consumption provide integration and efficiency benefits over bulkier or higher power devices. The combination of flat gain and good input/output return loss ensures superior signal integrity and reliability in demanding RF applications.

Tipik Uygulamalar

• Broadband RF Amplification: Ideal for use in broadband communication systems, including cellular infrastructure and microwave radios, where consistent gain and low noise are essential across wide frequency ranges.
• Radar systems requiring low-noise, high-gain amplification to improve target detection sensitivity.
• Test and measurement equipment that demands stable gain and low noise across multiple frequency bands.
• Satellite and aerospace RF front ends benefiting from the device??s compact size and wide temperature tolerance.

HMC219BMS8GE Brand Info

This amplifier is part of a series of high-performance MMIC products designed to meet stringent industrial and communication requirements. The brand focuses on delivering reliable semiconductor solutions optimized for RF and microwave applications, ensuring quality, consistency, and long-term availability. The device is engineered with advanced GaAs technology, offering excellent linearity and noise performance for demanding electronic systems.

SSS

What is the typical noise figure of this amplifier and why is it important?