BSC084P03NS3GATMA1 N-Channel MOSFET, Power Transistor, PG-SOT-223-3 Package

  • Provides efficient switching for power management, helping regulate voltage in electronic circuits.
  • Features a compact footprint in a leadless package, enabling board-space savings in dense designs.
  • Suitable for use in DC-DC converters, enhancing energy efficiency in portable devices.
  • The BSC084P03NS3GATMA1 supports low on-resistance, minimizing power loss during operation.
  • Manufactured to ensure consistent performance and dependable operation over its service life.
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产品上方询盘

BSC084P03NS3GATMA1 Overview

The BSC084P03NS3GATMA1 is a P-channel MOSFET designed for efficient power management and fast switching applications. Engineered for use in demanding industrial and consumer electronics, it features a robust build and low on-resistance, making it an excellent choice for high-efficiency circuits. Its compact SuperSO8 package allows for optimized board layout and high-density designs. This device is ideal for engineers seeking reliable, space-saving solutions with strong electrical performance. For further details, visit IC Üreticisi.

BSC084P03NS3GATMA1 Technical Specifications

Parametre Değer
Transistör Tipi P-Channel MOSFET
Drain-Source Voltage (VDS) -30 V
Continuous Drain Current (ID) -80 A
On-Resistance (RDS(açık)) 8.4 m?? (max) @ VGS = -10 V
Gate-Source Voltage (VGS) ?I20 V
Güç Tüketimi (PD) 110 W
Paket SuperSO8
Montaj Tipi Yüzey Montajı

BSC084P03NS3GATMA1 Key Features

  • Low on-resistance of 8.4 m?? ensures minimal conduction losses, improving overall energy efficiency in power conversion and switching circuits.
  • High continuous drain current capability enables reliable operation in demanding load conditions, supporting robust power delivery in compact systems.
  • Compact SuperSO8 package supports high-density PCB designs, saving board space and allowing for flexible placement in complex systems.
  • Wide gate-source voltage range (?I20 V) offers design flexibility and resilience in varied application environments.

BSC084P03NS3GATMA1 Advantages vs Typical Alternatives

Compared to standard P-channel MOSFETs, this device stands out for its combination of low on-resistance and high current handling in a compact form factor. The SuperSO8 package further enhances integration, making it suitable for applications where board space and thermal performance are critical considerations. Its efficiency and reliability provide a clear advantage for power-conscious designs.

Tipik Uygulamalar

  • Load switching for DC-DC converters, where low on-resistance and fast switching enhance system efficiency and thermal management, even in high-current scenarios.
  • Battery management systems, utilizing the device’s high current rating for safe and reliable power path control in portable or backup power solutions.
  • Motor drive circuits, benefiting from robust handling of inductive loads and consistent operation under rapid switching conditions.
  • General power management modules in industrial automation or consumer electronics, leveraging the compact package and high performance for dense board layouts.

BSC084P03NS3GATMA1 Brand Info

The BSC084P03NS3GATMA1 is manufactured by a leading semiconductor supplier renowned for advanced MOSFET technology and consistent quality. This particular device reflects the brand??s focus on efficiency, reliability, and integration for industrial and high-performance consumer markets. Its SuperSO8 package and robust electrical ratings position it as a preferred solution for engineers demanding durable, space-efficient power switching components.

SSS

What is the maximum drain-source voltage supported by this device?

The maximum drain-source voltage is -30 V, making it suitable for low- to medium-voltage power management applications in both industrial and consumer electronics environments.

What is the advantage of the SuperSO8 package for this MOSFET?

The SuperSO8 package offers a compact footprint that enables high-density PCB layouts. It also contributes to improved thermal management and facilitates surface-mount assembly for streamlined manufacturing processes.

How does the low on-resistance benefit circuit designers?

With an on-resistance of just 8.4 m?? (max), this device minimizes conduction losses, which improves energy efficiency and reduces heat generation??critical factors in high-performance and battery-powered systems.

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产品中间询盘

Can this MOSFET handle high continuous drain currents?

Yes, it supports a continuous drain current up to -80 A, making it well-suited for applications requiring robust power delivery, such as load switches, motor drivers, and power distribution circuits.

What are typical applications for this P-channel MOSFET?

Common uses include load switching in DC-DC converters, battery management systems, motor control circuits, and general power management modules where efficient switching and compact design are priorities.

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