2N7000-G N-Channel MOSFET Transistor, Low Power Switching, TO-92 Package

2N7000-G Overview

The 2N7000-G is a widely used N-channel enhancement mode MOSFET designed for general-purpose switching and amplification in industrial and consumer electronic circuits. Engineered for efficient switching operations, it offers low gate threshold voltage and a robust drain current capability, making it ideal for low-power switching applications. This device supports rapid switching speeds and handles moderate voltage levels, ensuring reliable performance in diverse environments. Its compact TO-92 package facilitates easy integration into both prototype and production designs. For sourcing and detailed specifications, visit IC Üreticisi.

2N7000-G Technical Specifications

2N7000-G Key Features

• Low Gate Threshold Voltage: Enables switching at lower voltages, reducing power consumption and improving efficiency in low-voltage circuits.
• Moderate Continuous Drain Current: Supports up to 200 mA, suitable for a wide range of signal-level switching applications.
• Compact TO-92 Package: Facilitates easy handling, mounting, and integration into various PCB layouts, optimizing space utilization.
• Robust Voltage Ratings: With a maximum drain-source voltage of 60 V and gate-source voltage of ??20 V, it ensures reliable performance under typical industrial operating conditions.

2N7000-G Advantages vs Typical Alternatives

This MOSFET offers a balanced combination of low on-resistance and moderate current capacity, outperforming many general-purpose transistors in switching efficiency and voltage tolerance. Its low gate threshold voltage allows for control with minimal drive voltage, enhancing compatibility with low-power logic circuits. The device’s stable thermal performance and compact packaging provide an integration advantage over bulkier or less efficient alternatives, ensuring reliable operation in diverse industrial applications.

Tipik Uygulamalar

• Switching loads in low-power electronic circuits where efficient control of current flow is essential, such as driving relays or LEDs, ensuring minimal power loss and enhanced system reliability.
• Signal amplification in analog circuits requiring stable gain and low distortion, supporting precise control in sensor interfaces or audio preamplifiers.
• Digital logic interface circuits where fast switching and low gate drive voltage improve system responsiveness and reduce power consumption.
• General-purpose switching in battery-operated devices, benefiting from its low drain-source on-resistance to extend battery life and maintain performance.

2N7000-G Brand Info

The 2N7000-G is a trusted product from a leading semiconductor manufacturer, renowned for delivering reliable, cost-effective MOSFET solutions. This device has been widely adopted in the electronics industry due to its proven performance in switching and amplification roles. Its consistent quality and compliance with industry standards ensure seamless adoption in both prototype development and mass production environments. The brand backing this MOSFET emphasizes rigorous testing and quality assurance to meet the demanding requirements of industrial electronics professionals.

SSS

What is the maximum drain-source voltage rating for this MOSFET?

The device can safely handle a maximum drain-source voltage of 60 volts. This rating ensures it can operate reliably in circuits with moderate voltage levels without risk of breakdown or damage.

Can this MOSFET be used for high-current switching applications?

While it supports continuous drain currents up to 200 mA, it is best suited for low to moderate current applications. For higher current demands, alternative MOSFETs with greater current capacity would be more appropriate.

What type of package does this transistor come in, and how does it affect integration?

The transistor is housed in a TO-92 package, which is compact and easy to handle. This package type simplifies through-hole mounting and is favored for prototyping and low-volume production where board space optimization is important.

How does the gate threshold voltage impact circuit design?

The gate threshold voltage ranges between 2.0 to 4.0 volts, allowing switching with relatively low gate voltages. This characteristic enables compatibility with common logic level signals and reduces the need for additional gate drive circuitry.

Is the device suitable for operation in harsh temperature environments?

Yes, the device supports an operating temperature range from -55??C to +150??C, making it suitable for use in industrial environments that experience wide temperature variations without compromising performance.