2N6649-Darlington Transistor NPN High Gain 15W TO-39 Metal Can Package

  • This transistor amplifies current efficiently, enabling enhanced signal control in electronic circuits.
  • It supports high voltage operation, ensuring stable performance under demanding electrical conditions.
  • The compact package reduces board space, facilitating integration into dense electronic designs.
  • Ideal for switching and amplification tasks in power management applications, improving overall system efficiency.
  • Manufactured to meet industry standards, providing consistent reliability throughout its operational life.
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2N6649-Darlington Overview

The 2N6649-Darlington is a high-gain silicon NPN Darlington transistor designed for switching and amplification applications. With a collector current rating of up to 10A and a collector-emitter voltage of 100V, it supports robust power handling in demanding industrial circuits. Its Darlington configuration provides a very high current gain, enabling efficient control of large loads with minimal base drive. This device is ideal for use in relay drivers, motor controls, and power amplifiers where reliability and performance are critical. For sourcing and detailed specifications, visit IC Üreticisi.

2N6649-Darlington Technical Specifications

Parametre Değer Birim
Kollektör-Emitter Gerilimi (VCEO) 100 V
Kollektör-Baz Gerilimi (VCBO) 120 V
Verici-Baz Gerilimi (VEBO) 5 V
Kollektör Akımı (IC) – Continuous 10 A
Kazanç Bant Genişliği Ürünü (fT) 3 MHz
DC Akım Kazancı (hFE) 7500 (min)
Güç Tüketimi (PD) 115 W
Çalışma Bağlantı Sıcaklığı -65 to +150 ??C

2N6649-Darlington Key Features

  • Yüksek Akım Kazancı: The Darlington pair structure provides a minimum DC current gain of 7500, enabling efficient switching of heavy loads with minimal base current.
  • Robust Voltage Ratings: With a collector-emitter voltage rating of 100V and collector-base voltage of 120V, this transistor withstands high-voltage conditions common in industrial environments.
  • High Collector Current Capability: Supports continuous collector currents up to 10A, suitable for driving motors, relays, and solenoids reliably.
  • Geniş Çalışma Sıcaklığı Aralığı: Designed to operate from -65??C to +150??C, ensuring stable performance in harsh temperature conditions.

Tipik Uygulamalar

  • Industrial motor control circuits requiring efficient switching of high current loads at voltages up to 100V.
  • Relay driver stages in automation and control systems, providing reliable actuation with minimal input drive.
  • Power amplifier stages in audio and signal amplification where high gain and power handling are necessary.
  • Switching regulators and power supply circuits demanding rugged transistor performance and thermal stability.

2N6649-Darlington Advantages vs Typical Alternatives

This transistor offers exceptional current gain and power handling compared to typical single transistors, reducing the need for large base drive currents and enabling compact, efficient circuit designs. Its high voltage and current ratings combined with a wide operating temperature range provide enhanced reliability and durability, making it a preferred choice for industrial power switching applications over standard BJTs or MOSFETs where linear amplification and ruggedness are critical.

2N6649-Darlington Brand Info

The 2N6649-Darlington transistor is a widely recognized device originally developed by major semiconductor manufacturers such as ON Semiconductor (formerly Motorola) and continues to be produced by various IC manufacturers. It belongs to the family of high-power Darlington transistors designed for industrial and automotive applications. The device is available through trusted distributors and complies with industry standards for quality and reliability, ensuring consistent performance in demanding environments.

SSS

What type of transistor is the 2N6649-Darlington?

The device is a silicon NPN Darlington transistor, featuring two transistors connected to provide very high current gain. It is primarily used for switching and amplification in

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