2N2907AP-Transistor-PIND PNP Bipolar Junction Transistor in TO-18 Metal Can Package

2N2907AP-Transistor-PIND Overview

The 2N2907AP transistor is a PNP bipolar junction transistor (BJT) widely used in general-purpose amplification and switching applications. It offers reliable performance with a maximum collector current of 600 mA and a collector-emitter voltage rating suitable for low to medium power circuits. Designed for robustness and ease of integration, this transistor is a preferred choice for engineers seeking stable gain and dependable operation in industrial and electronic designs. Its complementary nature to popular NPN transistors enables versatile circuit configurations. For detailed sourcing and specifications, visit IC Üreticisi.

2N2907AP-Transistor-PIND Technical Specifications

Parametre	Şartname
Transistör Tipi	PNP Bipolar Bağlantı Transistörü
Kollektör-Emitter Gerilimi (VCEO)	60 V
Kollektör-Baz Gerilimi (VCBO)	60 V
Verici-Baz Gerilimi (VEBO)	5 V
Kollektör Akımı (IC)	600 mA
Güç Tüketimi (Ptot)	625 mW
DC Akım Kazancı (hFE)	100 to 300 (depending on test conditions)
Geçiş Frekansı (fT)	100 MHz (tipik)

2N2907AP-Transistor-PIND Key Features

• High gain capability: Ensures efficient signal amplification, crucial for low-level analog signals.
• Moderate voltage and current ratings: Supports robust switching in a variety of circuit designs without excessive power loss.
• Fast switching speed: Enables use in high-frequency applications up to 100 MHz, improving overall circuit responsiveness.
• Reliable thermal performance: Handles power dissipation up to 625 mW, enhancing device longevity and stability under load.

Tipik Uygulamalar

• General-purpose amplification circuits, including audio preamplifiers and signal conditioning, where stable gain and reliability are essential.
• Switching elements in low-power relay drivers and interface circuits, providing dependable control in industrial automation.
• Complementary transistor pairs in push-pull amplifier stages to improve linearity and efficiency in power amplification.
• Low frequency oscillator circuits and timers, where its switching characteristics contribute to precise timing control.

2N2907AP-Transistor-PIND Advantages vs Typical Alternatives

This transistor delivers a balanced combination of voltage rating, current capacity, and gain, making it advantageous over many generic PNP transistors in industrial and consumer electronics. Its moderate power dissipation and fast switching frequency enable efficient operation in diverse applications, reducing heat-related failures and enhancing circuit reliability. These characteristics provide sourcing specialists and design engineers with a robust, cost-effective solution that integrates well into existing designs requiring dependable bipolar transistor performance.

2N2907AP-Transistor-PIND Brand Info

The 2N2907AP is a standard semiconductor device historically manufactured by several reputable companies, including ON Semiconductor and Texas Instruments. It is recognized as a classic transistor that adheres to JEDEC standards, ensuring interchangeability and quality assurance across manufacturers. This device is part of a widely supported transistor family, making it easily available through major distributors and suitable for both legacy and modern electronics designs.

SSS

Bu transistörün maksimum kollektör akım değeri nedir?

The maximum collector current is 600 mA, which allows it to handle moderate power loads in amplification and switching applications without damage or performance degradation.

Bu transistör yüksek frekanslı devrelerde kullanılabilir mi?

Yes, it supports a typical transition frequency of approximately 100 MHz, making it suitable for many low to medium frequency signal processing tasks and switching applications.

What type of transistor is this and what does PNP mean?

This is a PNP bipolar junction transistor, meaning