TN2106K1-G Overview
The TN2106K1-G is a high-performance power transistor designed for efficient switching and amplification in industrial electronics. Featuring robust electrical characteristics and optimized thermal performance, this device supports high current and voltage operations, making it suitable for demanding power management applications. Its reliable construction ensures long-term stability and integration into complex circuits with minimal footprint. Engineers and sourcing specialists will find it a dependable solution for enhancing system efficiency and durability. For more details, visit Производитель ИС.
TN2106K1-G Technical Specifications
Параметр | Технические характеристики | Единица |
---|---|---|
Напряжение коллектор-эмиттер (VГЕНЕРАЛЬНЫЙ ДИРЕКТОР) | 100 | V |
Коллекторный ток (IC) | 8 | A |
Рассеиваемая мощность (Ptot) | 75 | W |
Произведение коэффициента усиления на ширину полосы пропускания (fT) | 100 | МГц |
Transition Frequency | 100 | МГц |
Junction Temperature (Tj) | 150 | ??C |
Тип упаковки | TO-220 | ?C |
Thermal Resistance Junction to Case (R??JC) | 1.67 | ??C/W |
TN2106K1-G Key Features
- High Voltage Tolerance: Supports up to 100 V collector-emitter voltage, enabling reliable operation in high-voltage industrial environments.
- Robust Collector Current Capacity: Handles continuous collector currents up to 8 A, ensuring suitability for power amplification and switching tasks.
- Efficient Thermal Management: Low thermal resistance of 1.67 ??C/W allows effective heat dissipation, enhancing device longevity and performance stability.
- Широкий диапазон рабочих температур: Rated for junction temperatures up to 150 ??C, providing reliability in harsh operating conditions.
TN2106K1-G Advantages vs Typical Alternatives
Compared to typical power transistors, this device offers superior voltage and current handling with enhanced thermal resistance, ensuring higher reliability and efficiency under demanding conditions. Its compact TO-220 package simplifies integration into existing designs while maintaining robust performance. The combination of high gain bandwidth and power dissipation makes it a favorable choice for precise and stable power control applications.
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Типовые применения
- Industrial motor control circuits requiring reliable high-current switching and efficient thermal management for sustained operation.
- Power supply regulation where stable voltage handling and fast switching response are critical.
- Audio amplification circuits demanding high linearity and power capacity.
- General purpose switching in industrial automation systems that require durability and consistent performance.
TN2106K1-G Brand Info
This transistor is part of a well-established product line known for high quality and reliability in semiconductor devices. Manufactured under strict quality controls, it meets rigorous standards for industrial electronics. The product is designed to support demanding applications with consistent performance, backed by extensive technical support and documentation from the brand. Its availability through global distributors ensures easy sourcing for engineers and purchasing specialists.
ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ
What is the maximum collector current supported by this transistor?
The device supports a continuous collector current of up to 8 amperes, enabling it to handle significant power loads in various switching and amplification circuits without compromising performance or reliability.
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What thermal characteristics are important for this power transistor?
It features a thermal resistance junction-to-case of 1.67 ??C/W, which facilitates efficient heat dissipation. This characteristic helps maintain device stability and prevents overheating during high power operation.
In what package is this transistor supplied?
The transistor comes in a TO-220 package, which is a common industrial standard providing easy mounting and effective thermal management through heat sinks.
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What voltage levels can this transistor reliably operate at?
The maximum collector-emitter voltage rating is 100 volts, allowing the device to function effectively in high-voltage power control and amplification applications.
Is this transistor suitable for high-temperature environments?
Yes, the junction temperature rating up to 150 ??C ensures it can operate reliably in elevated temperature conditions typical in industrial and power electronics settings.