DDTC123EE-7 Overview
The DDTC123EE-7 is a high-performance dual transistor designed for robust switching and amplification applications. Engineered to deliver reliable operation in demanding industrial environments, this device features optimized electrical characteristics that ensure efficient power handling and thermal stability. Its compact form factor and standardized package facilitate seamless integration into complex circuits, offering engineers a dependable solution for enhancing system performance. Ideal for use in power management, signal processing, and driver circuits, the DDTC123EE-7 combines precision with durability to meet the rigorous demands of modern electronic designs. For detailed technical data and support, visit Производитель ИС.
DDTC123EE-7 Technical Specifications
Параметр | Технические характеристики |
---|---|
Тип транзистора | Dual NPN Bipolar Junction Transistor (BJT) |
Напряжение коллектор-эмиттер (VГЕНЕРАЛЬНЫЙ ДИРЕКТОР) | 45 V |
Коллекторный ток (IC) | 0.8 A (max) |
Рассеиваемая мощность (Ptot) | 0.625 W (max) |
Частота перехода (fT) | 100 МГц (типично) |
Изделие с полосой пропускания усиления | 100 МГц |
Усиление постоянного тока (hFE) | 100 ?C 300 (at IC=2 mA) |
Тип упаковки | TO-236, SOT-23 Surface Mount |
Диапазон рабочих температур | -55??C до +150??C |
Base-Emitter Voltage (VBE) | 1.2 V (max) |
DDTC123EE-7 Key Features
- Dual transistor configuration enables compact circuit design by integrating two NPN BJTs in one package, reducing board space and simplifying layout.
- High current handling capability up to 0.8 A accommodates medium-power switching tasks, essential for industrial driver and amplifier circuits.
- Wide operating temperature range ensures reliable performance in harsh environments, extending device lifespan and reducing maintenance needs.
- Low saturation voltage minimizes power loss and heat dissipation, improving overall system efficiency.
- Standard SOT-23 package supports automated surface-mount assembly, facilitating high-volume manufacturing with enhanced consistency.
DDTC123EE-7 Advantages vs Typical Alternatives
This dual transistor offers superior integration by combining two NPN BJTs in a single compact package, reducing component count and assembly complexity. Compared to discrete devices, it delivers enhanced thermal stability and consistent gain characteristics. Its capable collector current and voltage ratings provide flexible application potential while maintaining low saturation voltage for improved power efficiency. These advantages make it a reliable, space-saving solution that stands out in industrial switching and amplification roles.
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Типовые применения
- Switching stages in industrial control circuits, where robust current handling and precise switching are critical for motor drives and relay control.
- Amplifier drivers in audio or signal conditioning circuits requiring consistent gain and minimal distortion.
- General-purpose medium-power switching applications in consumer electronics and instrumentation.
- Surface-mount circuit designs demanding compact dual transistor solutions to optimize PCB area and assembly cost.
DDTC123EE-7 Brand Info
Manufactured by IC Manufacturer, the DDTC123EE-7 is part of their extensive portfolio of bipolar transistor solutions aimed at industrial and commercial electronics markets. This product embodies the company??s commitment to delivering reliable, high-quality semiconductor components optimized for performance and ease of integration. With stringent quality controls and comprehensive datasheet support, the DDTC123EE-7 serves engineers and sourcing specialists seeking dependable dual transistor devices for demanding applications.
ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ
What type of transistor configuration does the DDTC123EE-7 use?
The device consists of a dual N
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