DDTC114ECA-7-F Транзисторный переключатель, NPN, 3-контактный корпус SOT-23

DDTC114ECA-7-F Overview

The DDTC114ECA-7-F is a high-performance dual NPN transistor designed for industrial and consumer electronics applications. Featuring a compact SOT-363 package, it offers low noise and high gain characteristics, ideal for amplification and switching tasks in signal processing circuits. With a voltage rating suitable for various low-voltage designs and robust thermal performance, it ensures reliability in demanding environments. Its precision manufacturing supports consistent operation, making it a preferred choice for engineers seeking efficient small-signal transistors. For detailed technical resources, visit Производитель ИС.

DDTC114ECA-7-F Technical Specifications

Параметр	Значение
Тип транзистора	Двойной NPN
Пакет	SOT-363 (SC-70)
Напряжение коллектор-эмиттер (VГЕНЕРАЛЬНЫЙ ДИРЕКТОР)	40 V
Коллекторный ток (IC)	100 мА
Произведение коэффициента усиления на ширину полосы пропускания (fT)	100 МГц (типично)
Усиление постоянного тока (hFE)	100 to 300 (varies by device)
Коэффициент шума	Low noise operation
Диапазон рабочих температур	-55??C до +150??C

DDTC114ECA-7-F Key Features

• Dual NPN configuration: Enables compact circuit designs by integrating two transistors in one package, reducing PCB space and component count.
• High gain bandwidth: Supports high-frequency signal amplification up to 100 MHz, crucial for RF and communication circuits.
• Low noise operation: Enhances signal clarity and sensitivity, making it suitable for precision analog applications.
• Robust voltage and current ratings: Ensures reliable performance under typical industrial operating conditions up to 40 V and 100 mA.
• Compact SOT-363 package: Facilitates easy surface-mount assembly and thermal dissipation in space-constrained designs.

DDTC114ECA-7-F Advantages vs Typical Alternatives

This transistor offers a combination of low noise and high gain bandwidth that outperforms many standard dual NPN devices. Its compact SOT-363 package provides better integration and space savings compared to bulkier alternatives. The device’s reliable voltage and current capacities ensure stable operation in diverse environments, making it highly suitable for sensitive signal processing and switching applications where precision and efficiency are paramount.

Типовые применения

• RF signal amplification in wireless communication circuits, where reliable high-frequency performance and low noise are essential for maintaining signal integrity and reducing interference.
• Low-level audio amplification circuits, benefiting from the device??s low noise characteristics to deliver clear sound quality.
• Switching circuits in industrial control systems requiring durable, efficient transistor operation at moderate voltages and currents.
• General-purpose amplification and signal processing in consumer electronics such as sensors, portable devices, and handheld instruments.

DDTC114ECA-7-F Brand Info

The DDTC114ECA-7-F is produced under the stringent quality standards of a leading semiconductor manufacturer known for delivering reliable, high-performance discrete components. This product line emphasizes consistency, precision, and compatibility with modern surface-mount assembly processes. The brand is recognized for its commitment to supporting industrial and consumer electronics markets with advanced transistor solutions that meet evolving design requirements.

ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ

What type of transistor is the DDTC114ECA-7-F and what are its main uses?

The DDTC114ECA-7-F is a dual NPN bipolar junction transistor designed primarily for signal amplification and switching in low-voltage electronic circuits. Its dual configuration allows compact circuit designs, making it suitable for applications in RF, audio, and general-purpose amplification.

What package does this transistor come in and why is it important?

This device is housed in a SOT-363 package, also known as SC-70, which is a compact surface