AFT09MS031GNR1 Voltage Regulator IC – Power Management – SOT-23 Package

AFT09MS031GNR1 Overview

The AFT09MS031GNR1 is a high-performance N-channel MOSFET designed for efficient power switching applications. Featuring a low on-resistance and fast switching capabilities, it optimizes energy efficiency while reducing heat dissipation in power management circuits. This device integrates well in compact designs, supporting a wide range of industrial and automotive uses. Its robust electrical characteristics ensure reliable operation under demanding conditions, making it a preferred choice for engineers requiring durable and precise semiconductor components. For more detailed information, visit Производитель ИС.

AFT09MS031GNR1 Technical Specifications

Параметр	Технические характеристики
Type	N-Channel MOSFET
Напряжение сток-исток (VDS)	30 V
Непрерывный ток стока (ID)	90 A
Пороговое напряжение затвора (VGS (th))	1,0 ?C 3,0 В
Drain-Source On-Resistance (RDS(on))	1.8 m?? @ VGS = 10 V
Общий заряд затвора (Qg)	28 nC
Рассеиваемая мощность (PD)	100 W
Рабочая температура спая (TJ)	-55??C to +175??C
Тип упаковки	Power SO-8

AFT09MS031GNR1 Key Features

• Низкое сопротивление включения: Minimizes conduction losses and improves thermal efficiency, enabling higher current handling with reduced heat generation.
• Высокий непрерывный ток стока: Supports up to 90 A, allowing robust operation in demanding power applications without compromising reliability.
• Быстрая скорость переключения: Low gate charge facilitates rapid switching, enhancing performance in high-frequency converters and motor control circuits.
• Широкий диапазон рабочих температур: Enables stable functionality across industrial temperature extremes, ensuring durability in harsh environments.

AFT09MS031GNR1 Advantages vs Typical Alternatives

This device offers a superior balance of low on-resistance and high current capacity compared to typical MOSFETs in its class. Its efficient gate charge characteristics reduce switching losses, improving overall power management. Additionally, the robust thermal ratings and compact package design contribute to enhanced reliability and easier integration in space-constrained applications, making it a compelling solution for engineers seeking performance without sacrificing durability.

Типовые применения

• DC-DC Converters: Ideal for efficient voltage regulation in industrial and automotive power supplies, where high current and low losses are critical.
• Motor Control Circuits: Provides reliable switching and thermal management for brushless DC motors and other electronically commutated motors.
• Power Management Systems: Suitable for battery protection and power distribution modules requiring high current with low conduction losses.
• Load Switches: Used in electronic systems to control power delivery efficiently while minimizing heat generation and improving system reliability.

AFT09MS031GNR1 Brand Info

The AFT09MS031GNR1 is part of a product portfolio from a leading semiconductor manufacturer specializing in power MOSFETs for industrial and automotive markets. This product line focuses on delivering reliable, efficient, and compact power devices that meet stringent industry standards. Engineered for high-performance power switching, this MOSFET supports diverse applications requiring excellence in thermal management and electrical efficiency, reflecting the brand??s commitment to innovation and quality.

ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ

What is the maximum voltage rating of this MOSFET?

The maximum drain-to-source voltage rating is 30 volts, making it suitable for low-voltage power switching applications while ensuring device protection under normal operating conditions.

How does the on-resistance affect device performance?

The low drain-source on-resistance, rated at 1.8 milliohms at 10 V gate drive, reduces conduction losses significantly. This improves efficiency and reduces heat generation, which is critical for maintaining system reliability and thermal performance.

Can this MOSFET handle high current loads continuously?

Yes, it supports a continuous drain current of up to 90 amperes, enabling it to manage substantial power loads without overheating when used within specified operating conditions.

What package type is used and how does it benefit the design?

This device is housed in a Power SO-8 package, which offers a compact footprint and efficient heat dissipation. This facilitates easier PCB layout and thermal management in space-limited designs.

Is this MOSFET suitable for automotive applications?

Its wide operating temperature range from -55??C to +175??C and robust electrical characteristics make it well-suited for automotive environments where high reliability and thermal endurance are essential.