2N3019S-Transistor NPN Amplifier Transistor in TO-18 Metal Can Package by ON Semiconductor

2N3019S-Transistor Overview

The 2N3019S-Transistor is a robust silicon NPN bipolar junction transistor designed for general-purpose amplification and switching applications. Featuring a moderate power rating and reliable switching characteristics, it is well-suited for industrial and commercial electronic circuits requiring dependable performance under varying loads. With a collector current capacity suitable for medium power applications and a maximum voltage withstand capability, this transistor supports diverse use cases in signal processing and power control. Engineers and sourcing specialists appreciate its balance of gain and switching speed, contributing to efficient circuit design. For detailed specifications and sourcing, visit the Производитель ИС.

2N3019S-Transistor Technical Specifications

2N3019S-Transistor Key Features

• High Voltage Capability: With a collector-emitter voltage rating of 80 V, it supports circuits requiring moderate voltage handling without compromising stability.
• Moderate Power Dissipation: The 1.5 W power rating allows effective use in low to medium power amplification and switching roles, maintaining thermal reliability.
• Wide Frequency Response: A gain bandwidth product of 60 MHz delivers sufficient speed for many analog signal amplification applications.
• Robust Construction: The TO-18 metal can package provides excellent thermal conduction and mechanical durability, ideal for industrial environments.

Типовые применения

• Audio amplification stages in communication devices, where moderate power and frequency response are essential for signal fidelity.
• Switching applications in control circuits, enabling reliable ON/OFF operations within industrial automation systems.
• Driver stages for relay and solenoid actuators, providing the necessary current gain to interface low-level control signals with higher power loads.
• Signal processing circuits that require linear amplification with stable gain across a broad temperature range.

2N3019S-Transistor Advantages vs Typical Alternatives

The 2N3019S transistor offers an optimal balance of voltage tolerance, current handling, and frequency response compared to many generic small-signal transistors. Its metal can packaging enhances thermal dissipation and mechanical reliability, which is critical for industrial applications. Additionally, the transistor??s moderate gain ensures stable amplification without excessive distortion, making it a preferred choice for engineers prioritizing consistent performance and longevity over ultra-high speed or power.

2N3019S-Transistor Brand Info

The 2N3019S is a standard silicon NPN transistor originally developed by legacy semiconductor manufacturers and widely produced under various brand licenses. It is recognized for its durability and consistent performance in industrial-grade electronic assemblies. The device is offered by multiple reputable distributors and manufacturers specializing in discrete semiconductors for industrial and commercial electronics. Its long-standing presence in the market reflects its reliability and continued demand in applications requiring medium power amplification and switching.

ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ

Каков максимальный ток коллектора этого транзистора?

The maximum collector current for the 2N3019S is 0.8 amperes. Staying within this limit ensures safe operation without damaging the transistor or causing thermal overload.

Can this transistor be used for high-frequency applications?

With a gain bandwidth product of 60 MHz, this transistor is suitable for moderate frequency applications but may not be ideal for very high-frequency or RF circuits requiring GHz-range performance.

What type of packaging

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