2N1890-Transistor NPN Amplifier Transistor in TO-39 Package by ON Semiconductor

2N1890-Transistor Overview

The 2N1890 transistor is a high-performance NPN bipolar junction transistor designed for use in low noise amplifier stages and general purpose amplification. Its robust gain characteristics and reliable switching performance make it suitable for a variety of analog and switching applications. With a maximum collector current rating of 1 ampere and a collector-emitter voltage capacity of 30 volts, this device offers a balanced combination of power handling and signal fidelity. The 2N1890’s low noise figure and stable gain across a wide frequency range make it ideal for RF amplification and signal conditioning tasks in professional and industrial settings. Available through Производитель ИС, it supports engineers requiring consistent transistor performance in demanding circuits.

2N1890-Transistor Key Features

• Low Noise Amplification: Ensures minimal signal distortion, enhancing clarity in sensitive RF and audio circuits.
• High Collector Current Capacity: Supports up to 1 ampere, allowing reliable operation in moderate power applications.
• Moderate Voltage Rating: Collector-emitter voltage up to 30V accommodates a wide range of circuit designs without risk of breakdown.
• Stable Gain Characteristics: Provides consistent hFE values, enabling predictable amplification and signal integrity.

2N1890-Transistor Technical Specifications

Параметр	Технические характеристики
Тип транзистора	Транзистор с биполярным переходом NPN
Напряжение коллектор-эмиттер (VГЕНЕРАЛЬНЫЙ ДИРЕКТОР)	30 V
Напряжение коллектор-база (VCBO)	40 V
Напряжение на базе эмиттера (VEBO)	5 V
Коллекторный ток (IC)	1 A
Усиление постоянного тока (hFE)	40 to 300 (depending on operating point)
Рассеиваемая мощность (Ptot)	1 W (maximum)
Частота перехода (fT)	Up to 100 MHz

2N1890-Transistor Advantages vs Typical Alternatives

This transistor provides a compelling balance of low noise performance and moderate power handling that outperforms many generic small-signal transistors. Its stable gain across a useful frequency range enhances signal fidelity, making it preferable for RF and audio amplification compared to alternatives that may suffer from higher distortion or limited frequency response. The 2N1890??s voltage and current ratings also ensure greater reliability in typical industrial and communication applications, supporting sustained operation without premature failure.

Типовые применения

• Low noise amplifier stages in RF communication equipment, where signal clarity and minimal distortion are critical for effective transmission and reception.
• General purpose switching circuits requiring reliable transistor switching at moderate collector currents and voltages.
• Signal amplification in audio preamplifier circuits benefiting from its stable gain and low noise characteristics.
• Industrial instrumentation systems where consistent transistor performance ensures measurement accuracy and circuit stability.

2N1890-Transistor Brand Info

The 2N1890 transistor is a well-established semiconductor product widely recognized for its dependable performance in amplification and switching roles. Offered by reputable manufacturers, this device is designed to meet stringent industrial standards. Its proven track record in both legacy and new designs makes it a trusted component among engineers and sourcing specialists seeking consistent quality and availability. The product is supported by thorough datasheets and industry-standard packaging, facilitating straightforward integration into diverse electronic assemblies.

ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ

What are the maximum voltage ratings for the 2N1890 transistor?

The device supports a maximum collector-emitter voltage (V_{ГЕНЕРАЛЬНЫЙ ДИРЕКТОР}) of 30 volts, a collector-base voltage (V_CBO) of 40 volts, and an emitter-base voltage (V_EBO) of 5 volts. These ratings define the maximum voltages the transistor can safely handle between its terminals without breakdown.

What current can the 2N1890 transistor handle?

This transistor is rated for a maximum continuous collector current (I_C) of 1 ampere. This current capacity allows it to be used in moderate power amplification and switching applications without overheating or damage when operated within specified conditions.

How does the gain of the 2N1890 vary with operating conditions?

The DC current gain (h_FE) typically ranges from 40 to 300 depending on the collector current and temperature. This range provides flexibility in circuit design, enabling engineers to optimize gain for specific amplification or switching functions.

Is the 2N1890 suitable for high-frequency applications?

Yes, with a transition frequency (f_T) of up to 100 MHz, the transistor is capable of operating effectively in RF circuits and other high-frequency analog applications, maintaining low noise and stable gain.

What packaging options are available for this transistor?

The 2N1890 is typically supplied in standard semiconductor packages suitable for through-hole mounting. This form factor supports easy integration in prototyping and production environments, ensuring compatibility with common PCB layouts.