1N5288/TR Zener Diode 3.6V Voltage Regulator – DO-41 Glass Package

1N5288/TR Overview

The 1N5288/TR is a high-performance silicon diode designed for reliable switching and rectification in industrial and electronic applications. It features a controlled reverse recovery time and robust voltage handling capabilities, making it suitable for circuits requiring efficient and stable diode operation. This device is engineered to deliver consistent performance under varying temperature and electrical conditions, ensuring durability and long service life. Sourcing specialists and engineers will appreciate its proven reliability and compatibility in a wide range of power electronics designs. For detailed specifications and technical data, please visit Производитель ИС.

1N5288/TR Technical Specifications

Параметр	Технические характеристики	Единица
Максимальное повторяющееся пиковое обратное напряжение (VRRM)	30	V
Maximum Average Forward Current (IF(AV))	3	A
Non-Repetitive Forward Surge Current (IFSM)	50	A
Forward Voltage Drop (VF) at IF = 3A	1.1	V
Reverse Recovery Time (trr)	100	ns
Диапазон рабочих температур спая (TJ)	-65 to +150	??C
Storage Temperature Range (TSTG)	-65 to +175	??C
Тип упаковки	DO-41	?C

1N5288/TR Key Features

• Возможность работы с высоким импульсным током: Handles forward surge currents up to 50A, ensuring durability during transient conditions and protecting circuits from damage.
• Низкое падение прямого напряжения: Offers a forward voltage drop of approximately 1.1V at rated current, which helps reduce power loss and improves overall system efficiency.
• Fast Reverse Recovery Time: The 100 ns reverse recovery time minimizes switching losses and electromagnetic interference, making it ideal for high-frequency applications.
• Широкий диапазон рабочих температур: Supports junction temperatures from -65??C to 150??C, allowing reliable performance in harsh industrial environments.

1N5288/TR Advantages vs Typical Alternatives

This diode offers superior surge current handling and faster switching speeds compared to many standard silicon diodes. Its low forward voltage drop reduces power dissipation, enhancing efficiency in power conversion circuits. The extended temperature range and robust package contribute to increased reliability and longevity, making it a preferred choice for demanding industrial and electronic designs.

Типовые применения

• Power supply rectification in industrial equipment, where efficient conversion and thermal stability are required to maintain system reliability over long operational periods.
• Switching circuits, benefiting from the fast reverse recovery time to reduce switching losses and improve performance.
• Protection circuits, utilizing its high surge current capacity to absorb transient events and safeguard sensitive components.
• Battery chargers and inverters, leveraging its low forward voltage drop to maximize energy efficiency and reduce heat generation.

1N5288/TR Brand Info

The 1N5288/TR is a trusted diode product offered by established semiconductor manufacturers specializing in discrete components for power electronics. It is recognized for its consistent quality and dependable electrical characteristics. This device is widely available through authorized distributors and supports a broad range of industrial and commercial electronics applications. Its proven performance and reliability make it a go-to choice for engineers designing robust and efficient systems.

ЧАСТО ЗАДАВАЕМЫЕ ВОПРОСЫ

What is the maximum repetitive peak reverse voltage of the 1N5288/TR?

The diode is rated for a maximum repetitive peak reverse voltage of 30 volts. This means it can safely block voltages up to this level in reverse bias without damage, ensuring reliable operation in typical circuit conditions.

How does the forward voltage drop affect circuit performance?

A lower forward voltage drop reduces power losses when current flows through the diode. At 3 amps, this device has a forward voltage drop of approximately 1.1 volts, which helps improve overall system efficiency and reduces heat dissipation in power circuits.

What is the significance of the reverse recovery time?

The reverse recovery time of about 100 nanoseconds minimizes the time the diode takes to switch from conducting to blocking state. This fast recovery reduces switching losses and electromagnetic interference, which is particularly beneficial in high-frequency switching applications.

Can the diode operate in high-temperature environments?

Yes, it supports an operating junction temperature range from -65??C to +150??C, allowing it to function reliably in harsh and high-temperature industrial environments without degradation.

What package does the 1N5288/TR come in, and why is this important?

This diode is supplied in a DO-41 package, which provides mechanical protection and ease of mounting in through-hole applications. The package supports efficient heat dissipation and consistent electrical performance across operational conditions.