MSR2N3501UB/TR MOSFET Transistor by MSR | N-Channel 350V | TO-220 Package

  • This device functions as a high-speed MOSFET, enabling efficient switching and power management in electronic circuits.
  • MSR2N3501UB/TR offers a voltage rating suitable for handling moderate power loads, ensuring safe operation under typical conditions.
  • The compact package type reduces board space, allowing for denser circuit layouts and easier integration into tight designs.
  • Ideal for use in DC-DC converters and power supply modules, it improves energy efficiency and thermal performance.
  • Manufactured with strict quality controls, it delivers consistent performance and long-term operational reliability.
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MSR2N3501UB/TR Overview

The MSR2N3501UB/TR is a high-performance N-channel MOSFET designed for efficient power switching applications. This transistor offers low on-resistance and fast switching speeds, making it ideal for industrial electronics and power management systems. Its robust construction ensures reliable operation under demanding conditions, enhancing system durability and efficiency. The device supports high voltage and current ratings, suitable for a wide range of load requirements. Available in a compact package, it facilitates easy integration in space-constrained designs. For detailed specifications and sourcing, visit Fabricante de CI.

MSR2N3501UB/TR Key Features

  • Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat dissipation.
  • High Voltage Rating: Enables operation in circuits requiring up to 350V, supporting a variety of industrial power applications.
  • Fast Switching Speed: Enhances performance in switching regulators and inverters, reducing switching losses and improving response time.
  • Desempenho térmico robusto: Supports reliable operation at elevated temperatures, ensuring durability in harsh industrial environments.

MSR2N3501UB/TR Technical Specifications

ParâmetroValorUnidade
Drain-Source Voltage (VDS)350V
Continuous Drain Current (ID)2.5A
Gate Threshold Voltage (VGS(th))2.0 – 4.0V
Drain-Source On-Resistance (RDS(on))1.2??
Maximum Power Dissipation (PD)20W
Gate Charge (Qg)12nC
Operating Junction Temperature (Tj)-55 to +150??C
Tipo de embalagemTO-252 (DPAK)

MSR2N3501UB/TR Advantages vs Typical Alternatives

This transistor stands out due to its low on-resistance and high voltage tolerance, which contribute to reduced power loss and improved switching efficiency compared to standard MOSFETs. Its compact packaging and robust thermal handling provide enhanced reliability in tight and demanding industrial environments. These features make it a superior choice for engineers seeking dependable, high-performance power switching solutions.

Aplicações típicas

  • Power management circuits in industrial automation systems, where efficient switching and thermal stability are critical for long-term performance.
  • DC-DC converters, leveraging fast switching capabilities to optimize voltage regulation and reduce energy waste.
  • Motor control applications requiring high voltage handling and rapid response to load changes.
  • Switching power supplies in telecommunications equipment, benefiting from compact size and reliable operation.

MSR2N3501UB/TR Brand Info

The MSR2N3501UB/TR is manufactured by a reputable semiconductor supplier known for delivering high-quality power transistors tailored for industrial and commercial applications. This product reflects the brand’s commitment to innovation, reliability, and performance in power electronics components, supporting engineers and sourcing specialists with dependable solutions for challenging electronic designs.

FAQ

What is the maximum drain-source voltage supported by this MOSFET?

The device supports a maximum drain-source voltage of 350V, making it suitable for high-voltage industrial and power management applications.

How does the low on-resistance benefit circuit efficiency?

Low on-resistance reduces conduction losses when the transistor is turned on, which decreases power dissipation and improves overall energy efficiency in power switching circuits.

What package type is used for this MOSFET and why is it important?

It is housed in a TO-252 (DPAK) package, which offers a compact footprint and efficient thermal dissipation, facilitating easier integration and reliable operation in space-constrained designs.

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Can this MOSFET operate reliably at high temperatures?

Yes, it supports an operating junction temperature range from -55??C to +150??C, ensuring stable performance in harsh industrial environments.

What type of applications is this MOSFET best suited for?

This transistor is ideal for power management, DC-DC converters, motor control, and switching power supplies, where high voltage tolerance, fast switching, and thermal reliability are essential.

Aplicação

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