HMC221BETR MMIC Mixer, Frequency Converter, 4x4mm SMT Package

HMC221BETR Overview

The HMC221BETR is a high-performance, low-noise amplifier (LNA) designed for applications requiring excellent gain and noise figure performance from DC to 6 GHz. It integrates a GaAs pHEMT device optimized for low current consumption and high linearity, enabling robust signal amplification in demanding RF front-end modules. Its compact, surface-mount package supports easy integration on multilayer printed circuit boards, making it ideal for communication systems, radar, and test equipment. The device is well-suited for engineers and sourcing specialists seeking reliable, high-frequency amplification components. For more details, visit Fabricante de CI.

HMC221BETR Technical Specifications

Parâmetro	Especificação
Gama de frequências	DC to 6 GHz
Ganho	16 dB (typical)
Figura de ruído	1.3 dB (typical at 2 GHz)
Perda de retorno de entrada	15 dB (typical)
Perda de retorno de saída	12 dB (typical)
Tensão de alimentação	+5 V
Corrente de alimentação	60 mA (typical)
Input Power Compression (P1dB)	+13 dBm (typical)
Embalagem	10-lead 3×3 mm surface-mount package

HMC221BETR Key Features

• Wide Frequency Range: Operates from DC up to 6 GHz, enabling versatile use in broadband RF amplification applications.
• Low Noise Figure: Delivers a noise figure as low as 1.3 dB at 2 GHz, improving signal-to-noise ratio for sensitive receiver front ends.
• High Gain Performance: Provides typical gain of 16 dB, ensuring strong signal amplification with minimal distortion.
• Low Current Consumption: Draws only 60 mA at 5 V supply, supporting power-efficient designs without compromising performance.
• Compact Surface-Mount Package: The 10-lead 3×3 mm package supports high-density PCB layouts and automated assembly processes.
• High Linearity: With +13 dBm input 1 dB compression point, it maintains signal integrity under high input power conditions.
• Robust Input/Output Matching: Typical input and output return losses of 15 dB and 12 dB reduce reflection and improve system stability.

HMC221BETR Advantages vs Typical Alternatives

This low-noise amplifier offers superior noise figure and gain across a broad frequency range compared to typical LNAs. Its low power consumption and high linearity improve system efficiency and signal fidelity, while the compact surface-mount package simplifies integration. These advantages make it an ideal choice for engineers demanding reliable, high-performance amplification in compact, power-sensitive RF systems.

Aplicações típicas

• RF front-end amplification in wireless communication systems, enhancing receiver sensitivity and overall link performance in broadband transceivers.
• Radar and electronic warfare systems requiring low noise and high linearity for accurate signal detection and processing.
• Test and measurement equipment benefiting from consistent gain and noise characteristics to ensure precise RF signal analysis.
• Satellite and space communications where low power consumption and high reliability under harsh conditions are critical.

HMC221BETR Brand Info

The HMC221BETR is part of a family of high-performance GaAs pHEMT devices known for their precision and reliability in RF and microwave applications. Manufactured by a leading semiconductor company specializing in integrated circuits for industrial communication and defense sectors, this amplifier reflects the brand??s commitment to quality and innovation. Its design focuses on delivering consistent high gain, low noise, and power efficiency to meet the rigorous demands of modern electronic systems.

FAQ

What is the typical gain provided by this low-noise amplifier?

The typical gain is approximately 16 dB across the device??s operating frequency range from DC to 6 GHz, which ensures strong signal amplification in various RF applications.

How does the noise figure impact system performance?

A low noise figure, such as the 1.3 d