ADRF5046BCCZN RF Front-End Module with Integrated Switches, LGA Package

ADRF5046BCCZN Overview

The ADRF5046BCCZN is a high-performance, integrated RF front-end switch designed for advanced wireless communication systems. This device supports multiple frequency bands and offers low insertion loss, high isolation, and excellent linearity, making it ideal for demanding applications such as cellular infrastructure and test equipment. The compact package and robust design ensure ease of integration and reliable operation in harsh industrial environments. Its features deliver enhanced signal integrity and efficiency, enabling engineers to optimize system performance with confidence. For detailed information and purchasing options, visit Fabricante de CI.

ADRF5046BCCZN Technical Specifications

Parâmetro	Valor
Gama de frequências	0.1 GHz to 6.0 GHz
Insertion Loss	1.2 dB (typical)
Isolation	35 dB (typical)
Input Power (P1dB)	+33 dBm (typical)
Switch Type	SPDT (Single-Pole Double-Throw)
Interface de controlo	CMOS compatible
Tensão de funcionamento	3.0 V to 5.0 V
Embalagem	16-lead LFCSP, 4 mm ?? 4 mm
Gama de temperaturas de funcionamento	?40??C to +85??C

ADRF5046BCCZN Key Features

• Wide frequency coverage: Supports 0.1 GHz to 6 GHz, enabling use across multiple wireless bands for versatile system design.
• Low insertion loss: Minimizes signal attenuation to maintain high signal quality and reduce power consumption in RF paths.
• High isolation: Provides greater than 35 dB isolation, which reduces interference between signal paths, improving overall system linearity.
• High linearity and power handling: With a P1dB of +33 dBm, it accommodates high signal levels without distortion, crucial for maintaining signal integrity.
• Compact LFCSP package: 4 mm ?? 4 mm footprint enables space-saving layouts in dense RF modules and devices.
• CMOS compatible control: Simplifies integration with digital control logic for seamless system-level operation.
• Wide operating temperature: Ensures reliable operation in industrial and outdoor environments from ?40??C to +85??C.

ADRF5046BCCZN Advantages vs Typical Alternatives

This RF switch offers superior insertion loss and isolation compared to many typical alternatives, enhancing signal fidelity in sensitive applications. Its high power handling capability supports demanding RF environments without sacrificing reliability. The compact package and low control voltage requirements simplify integration and reduce system complexity, making it a highly efficient and robust choice for modern wireless infrastructure and test equipment.

Aplicações típicas

• Cellular base station transceiver front-end switching, where low loss and high isolation optimize signal pathways across multiple frequency bands.
• Test and measurement equipment requiring precise RF signal routing with minimal distortion and high linearity.
• Wireless communication infrastructure, including repeaters and small cells, to ensure robust RF signal management.
• Industrial RF systems operating in harsh temperature ranges demanding reliable switching performance.

ADRF5046BCCZN Brand Info

The ADRF5046BCCZN is part of a respected family of RF switches offered by a leading semiconductor manufacturer specializing in high-frequency analog and mixed-signal devices. This product exemplifies the brand??s commitment to delivering high-quality, reliable components optimized for demanding RF applications. Designed with advanced semiconductor processes, the switch meets strict quality standards and is supported by comprehensive documentation and technical resources to assist engineers in seamless integration.

FAQ

What frequency range does this RF switch support?

The device operates over a broad frequency range from 0.1 GHz up to 6 GHz, covering most common wireless communication bands such as cellular, WLAN, and other RF applications.

What is the typical insertion loss for this switch?

Typical insertion loss is approximately 1.2 dB, which ensures minimal signal attenuation and preserves signal strength in sensitive RF front-end circuits.

How does the device handle high power signals?