2N6661 Overview
The 2N6661 is a high-performance NPN bipolar junction transistor designed for medium power switching and amplification applications. It offers reliable operation with a collector current capacity suitable for various industrial and electronic circuits. Featuring a robust construction and stable electrical characteristics, it is well-suited for use in power amplifiers, general purpose switching, and driver stages. This transistor ensures consistent performance under varying load conditions, making it a dependable component for engineers and sourcing specialists seeking durable semiconductor solutions. For comprehensive semiconductor options and support, visit Fabricante de CI.
2N6661 Technical Specifications
| Parâmetro | Especificação |
|---|---|
| Tipo de transístor | Transistor de junção bipolar NPN |
| Tensão coletor-emissor (VDIRECTOR EXECUTIVO) | 60 V |
| Collector-Base Voltage (VCBO) | 75 V |
| Emitter-Base Voltage (VEBO) | 5 V |
| Corrente do coletor (IC) | 5 A (continuous) |
| Dissipação de potência (Ptot) | 30 W |
| Ganho de corrente DC (hFE) | 20 to 70 (at IC=2 A) |
| Frequência de transição (fT) | 5 MHz (typical) |
| Tipo de embalagem | TO-3 Metal Can |
2N6661 Key Features
- High Collector Current Capacity: Supports continuous collector currents up to 5 A, enabling effective handling of medium power loads in switching and amplifier circuits.
- Robust Voltage Ratings: With a collector-emitter voltage rating of 60 V and collector-base voltage of 75 V, it ensures safe operation in a wide range of industrial applications.
- Wide DC Current Gain Range: Gain values between 20 and 70 provide flexibility in circuit design, allowing for efficient amplification performance tailored to specific needs.
- Durable TO-3 Package: The metal can package delivers excellent thermal dissipation and mechanical durability, enhancing device reliability under demanding conditions.
2N6661 Advantages vs Typical Alternatives
This transistor offers superior power handling and robust voltage tolerance compared to typical small-signal transistors. Its high collector current and power dissipation ratings allow for more reliable operation in power amplifier and switching roles. The TO-3 package further improves thermal management, reducing risk of overheating. These characteristics make it a preferred choice for industrial and automotive applications where durability and stable performance are critical.
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Aplicações típicas
- Power Amplifiers: Ideal for use in medium power audio and RF amplifiers, thanks to its high current capability and gain characteristics, ensuring efficient signal amplification.
- Switching Regulators: Suitable for switching power supplies and regulators where robust current handling and voltage ratings are essential.
- Motor Control: Can be used in motor driver circuits requiring reliable switching and power dissipation capabilities.
- Industrial Control Systems: Offers dependable switching performance for automation and control equipment operating under varied electrical loads.
2N6661 Brand Info
The 2N6661 is a widely recognized transistor in the semiconductor industry, produced by established manufacturers known for quality and consistency. This device is part of a family of power transistors designed to meet the stringent requirements of industrial and commercial electronic systems. Its availability in the TO-3 package underscores the emphasis on ruggedness and thermal management, making it a trusted component for engineers focusing on reliability and long-term operational stability.
FAQ
Qual é o valor máximo da corrente de coletor deste transístor?
The device can handle a continuous collector current of up to 5 amps, making it suitable for medium power applications that require steady current flow without compromising performance or reliability.
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Which package type does this transistor use and what are its benefits?
This transistor is housed in a TO-3 metal can package, known for excellent thermal conductivity and mechanical strength. This package helps dissipate heat efficiently, ensuring stable operation under high power dissipation conditions.
Este transístor pode ser utilizado em aplicações de alta frequência?
While it has a transition frequency of approximately 5 MHz, it is generally better suited for low to medium frequency applications such as audio amplification and power switching rather than high-frequency RF circuits.
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What voltage ratings should designers consider when using this component?
Designers should note the collector-emitter voltage rating of 60 V and the collector-base voltage rating of 75 V to ensure the transistor operates safely within its maximum voltage limits in their circuit designs.
Is this transistor appropriate for power switching and amplification tasks?
Yes, it is specifically designed for medium power amplification and switching tasks. Its high current capacity, power dissipation capability, and stable gain make it suitable for these roles in industrial and consumer electronics.
