2N6351E3-Transistor NPN Power Amplifier Transistor in TO-39 Metal Can Package by ON Semiconductor

2N6351E3-Transistor Overview

The 2N6351E3 is a high-power NPN bipolar junction transistor designed for robust switching and amplification tasks in industrial and electronic applications. Engineered to handle significant collector currents and voltages, this transistor delivers reliable performance in demanding environments. It excels in power regulation, motor control, and amplifier circuits, providing stable operation thanks to its well-defined electrical characteristics. Sourcing specialists and design engineers benefit from its proven durability and ease of integration. For detailed technical data and procurement, visit Fabricante de CI.

2N6351E3-Transistor Technical Specifications

Parâmetro	Especificação
Tipo	Transistor de junção bipolar NPN
Tensão coletor-emissor (VDIRECTOR EXECUTIVO)	100 V
Corrente do coletor (IC)	15 A (Continuous)
Dissipação de potência (PD)	150 W
Produto de ganho de largura de banda (fT)	3 MHz (typical)
Ganho de corrente DC (hFE)	20 to 70
Junction Temperature (TJ)	200 ??C (max)
Tipo de embalagem	TO-3 Metal Can

2N6351E3-Transistor Key Features

• Elevado manuseamento de corrente: Supports continuous collector current up to 15 A, enabling operation in power-intensive circuits.
• Robust Voltage Rating: Withstands collector-emitter voltages up to 100 V, suitable for diverse industrial applications.
• Thermal Reliability: Designed with a TO-3 metal can package, ensuring excellent heat dissipation and durability under high power loads.
• Moderate Gain Bandwidth: Offers a gain bandwidth product around 3 MHz, balancing switching speed and amplification needs.

Aplicações típicas

• Power Amplification: Used in audio and RF power amplifier stages requiring high current and voltage tolerance for clear signal reproduction.
• Motor Control Circuits: Provides reliable switching and current handling in DC motor speed control and drive circuits.
• Voltage Regulation: Suitable for use in power supply regulation and voltage stabilization circuits within industrial equipment.
• Switching Elements: Employed in electronic switching applications demanding high power dissipation and thermal stability.

2N6351E3-Transistor Advantages vs Typical Alternatives

This transistor offers superior current and voltage ratings compared to many general-purpose BJTs, making it ideal for high-power industrial applications. Its TO-3 metal package enhances thermal management, increasing reliability and operational lifespan. The device provides a balanced trade-off between gain and frequency response, improving efficiency in amplifier and switching circuits. These factors contribute to a robust, reliable solution over typical low-power or plastic-packaged transistors.

2N6351E3-Transistor Brand Info

The 2N6351E3 transistor is a well-established product historically manufactured by multiple semiconductor suppliers specializing in power transistors. It is commonly associated with legacy brands known for rugged industrial components, such as ON Semiconductor and Fairchild Semiconductor. These manufacturers focus on delivering high-reliability power transistors designed for industrial control, audio amplification, and power management applications. The E3 suffix typically indicates a specific packaging or screening level, ensuring consistent performance and quality for professional engineering use.

FAQ

Qual é o valor máximo da corrente de coletor deste transístor?

The device supports a maximum continuous collector current of 15 amperes, making it suitable for high-power applications requiring substantial current flow without compromising reliability.

What type of package does the 2N6351E3 use, and why is it important?

This transistor uses a TO-3 metal can package, which is critical for effective heat dissipation in power applications. The metal package helps maintain thermal stability and prevents overheating during prolonged high-current operation.

Can this transistor be used in audio amplifier circuits?

Yes, the transistor??s high current and voltage ratings, along with its gain bandwidth product around 3 MHz, make it well-suited for power amplification stages in audio circuits where robust performance is needed.