2N5794U-Dual-Transistor NPN Amplifier Pair in TO-39 Metal Can Package by ON Semiconductor

2N5794U-Dual-Transistor Overview

The 2N5794U dual transistor device offers a compact, reliable solution for applications requiring matched transistor pairs in a single package. Designed with high gain and low noise characteristics, it is ideal for amplification and switching circuits where signal integrity and precise performance are essential. This dual transistor integrates two complementary transistors on a common substrate, simplifying circuit design and reducing board space. Its robust electrical parameters ensure consistent operation across temperature ranges, making it suitable for industrial and commercial electronics. For sourcing and technical data, visit Fabricante de CI.

2N5794U-Dual-Transistor Technical Specifications

Parâmetro	Especificação
Tipo de transístor	NPN Dual Transistor
Tensão coletor-emissor (VDIRECTOR EXECUTIVO)	30 V
Corrente do coletor (IC)	100 mA
Dissipação de potência (Ptot)	300 mW
Ganho de corrente DC (hFE)	100 a 300
Frequência de transição (fT)	100 MHz (típico)
Figura de ruído	Low noise operation
Tipo de embalagem	TO-18 Metal Can
Gama de temperaturas de funcionamento	-55??C to +125??C

2N5794U-Dual-Transistor Key Features

• Matched Pair Configuration: Incorporates two closely matched NPN transistors in one package, enhancing differential amplifier performance with improved symmetry and reduced drift.
• High Current Gain: Provides a stable DC gain between 100 and 300, ensuring efficient amplification and signal processing in low-level input circuits.
• Low Noise Characteristics: Designed for low noise operation, making it suitable for precision analog circuits and sensitive sensor interfaces.
• Compact TO-18 Package: Offers robust mechanical protection while minimizing board footprint, facilitating integration into dense circuit layouts.

Aplicações típicas

• Precision amplifier circuits requiring matched transistor pairs for differential inputs, such as operational amplifier input stages or instrumentation amplifiers.
• Switching circuits in control systems where reliable transistor pairing improves timing and reduces offset errors.
• Low-noise preamplifier stages in audio and sensor signal conditioning, benefiting from the device??s low noise and high gain.
• Temperature-compensated circuits requiring stable transistor characteristics over a wide operating temperature range.

2N5794U-Dual-Transistor Advantages vs Typical Alternatives

This dual transistor device offers superior matching of transistor parameters compared to discrete alternatives, reducing the need for external balancing components. Its low noise and high gain characteristics provide enhanced signal integrity, critical for precision analog designs. The compact TO-18 package ensures robust protection and easy integration, while the wide operating temperature range assures reliability in harsh industrial environments. These features collectively improve circuit performance, reduce design complexity, and enhance overall system stability.

2N5794U-Dual-Transistor Brand Info

The 2N5794U dual transistor is a product historically manufactured by several semiconductor companies specializing in discrete transistor devices, including RCA and ON Semiconductor. This device is part of a family of matched transistor pairs widely used in industrial and commercial electronics. It continues to be recognized for its reliability and consistent performance in analog and switching applications. Availability may be through authorized distributors and legacy stock from reputable IC manufacturers, ensuring engineers access to proven components for legacy and new designs.

FAQ

What type of transistor is included in the 2N5794U dual transistor device?

The device contains two matched NPN transistors integrated within a single package. These transistors are designed to work together, providing consistent electrical characteristics ideal for differential amplification and matched-pair applications.

What is the maximum collector current rating for this dual transistor?

The maximum collector current for each transistor within the device is rated at 100 milliamps. This current rating supports moderate power applications, suitable for signal-level amplification and switching.

How does the packaging influence the device??s performance and integration?

The 2N5794U is housed in a TO-18 metal can