2N2906AUA/TR PNP Transistor by ON Semiconductor – TO-92 Package, General Purpose

2N2906AUA/TR Overview

The 2N2906AUA/TR is a high-performance PNP bipolar junction transistor designed for switching and amplification in industrial and electronic applications. Engineered to deliver reliable operation with robust current handling capabilities, it supports moderate power dissipation while maintaining efficient signal control. Its complementary design and standardized package ensure ease of integration into electronic circuits requiring dependable transistor performance. Sourced from Fabricante de CI, this component is tailored for engineers and sourcing specialists seeking a versatile transistor with consistent electrical characteristics for diverse applications in control, amplification, and switching.

2N2906AUA/TR Key Features

• Ganho de corrente elevado: Provides stable amplification, enhancing signal integrity in analog and switching circuits.
• Moderate voltage rating: Supports up to 40V collector-emitter voltage, suitable for a range of low-to-medium power applications.
• Robust power dissipation: Handles up to 625mW, ensuring reliability under continuous operation without thermal degradation.
• Complementary transistor design: Enables easy pairing with NPN counterparts for push-pull configurations and other complementary circuits.

2N2906AUA/TR Technical Specifications

Parâmetro	Valor	Unidade
Tensão coletor-emissor (VDIRECTOR EXECUTIVO)	40	V
Collector-Base Voltage (VCBO)	60	V
Emitter-Base Voltage (VEBO)	5	V
Corrente do coletor (IC)	600	mA
Dissipação de potência (Ptot)	625	mW
Ganho de corrente DC (hFE)	100?C300	(typical)
Frequência de transição (fT)	100	MHz
Gama de temperaturas de funcionamento	-55 to +150	??C

2N2906AUA/TR Advantages vs Typical Alternatives

This transistor offers a balanced combination of moderate voltage and current ratings with a high current gain, making it more efficient for signal amplification and switching tasks than many generic PNP transistors. Its robust power dissipation and wide operating temperature range enhance reliability under demanding industrial environments. These attributes provide engineers with consistent performance and easier integration compared to alternatives with narrower specifications or less thermal tolerance.

Aplicações típicas

• Signal amplification in analog circuits requiring reliable current gain and stable switching under moderate power conditions.
• Complementary push-pull amplifier stages paired with NPN transistors for audio and control systems.
• General purpose switching in industrial automation and control circuits.
• Low power motor driver circuits and relay drivers where reliable transistor switching is essential.

2N2906AUA/TR Brand Info

The 2N2906AUA/TR is a product from a reputable semiconductor manufacturer known for precision-engineered discrete components. This transistor series is recognized for quality consistency and adherence to stringent industry standards. Designed for industrial applications, the device supports engineers with dependable performance and compatibility in a variety of circuit designs, ensuring long-term operational stability and ease of sourcing in volume production environments.

FAQ

What type of transistor is the 2N2906AUA/TR?

The device is a PNP bipolar junction transistor (BJT), optimized for switching and amplification. It features a complementary design often paired with NPN transistors for various circuit applications.

What are the maximum voltage ratings for this transistor?

The maximum collector-emitter voltage is 40V, collector-base voltage is 60V, and the emitter-base voltage is rated at 5V, making it suitable for moderate voltage industrial circuits.

How much current can the 2N2906AUA/TR handle continuously?

This transistor supports a maximum collector current of 600mA, allowing it to manage moderate power loads in typical switching and amplification roles.

What is the typical power dissipation capability?

The power dissipation is rated at 625mW, enabling the transistor to operate reliably under continuous load conditions without excessive heating issues.

In what temperature range can this transistor operate safely?

The device is specified to operate within a temperature range from -55??C up to +150??C, ensuring robust performance in harsh industrial environments.