VP2106N3-G Video Processor Module ?C High-Performance VP2106N3-G Board Package

VP2106N3-G Overview

The VP2106N3-G is a high-performance power MOSFET designed for industrial and automotive applications requiring efficient switching and robust thermal management. Featuring a low on-resistance and fast switching capabilities, this device ensures minimized conduction losses and improved overall system efficiency. Its compact package enhances integration in space-constrained designs, while reliable avalanche energy ratings provide durability under demanding operating conditions. Engineers and sourcing specialists will find this component ideal for applications needing a balance of power handling, switching speed, and long-term reliability. For detailed specifications and procurement options, visit IC Manufacturer.

VP2106N3-G Technical Specifications

Parameter	Specification
Drain-Source Voltage (VDS)	30 V
Continuous Drain Current (ID)	22 A
RDS(on) (Max) at VGS = 4.5 V	6.6 m??
Gate Threshold Voltage (VGS(th))	1.0?C2.5 V
Total Gate Charge (Qg)	10 nC (typical)
Input Capacitance (Ciss)	900 pF
Power Dissipation (PD)	2.5 W
Operating Junction Temperature (TJ)	-55 to +150 ??C

VP2106N3-G Key Features

• Low On-Resistance: With a maximum R_DS(on) of 6.6 m??, this MOSFET minimizes conduction losses, enhancing energy efficiency in switching applications.
• High Continuous Drain Current: Supports up to 22 A, enabling its use in high-current circuits without compromising performance or reliability.
• Fast Switching Speed: The device features low total gate charge, allowing rapid switching transitions which reduce switching losses and improve system responsiveness.
• Wide Operating Temperature Range: Rated for junction temperatures from -55 ??C to +150 ??C, it ensures stable operation in harsh industrial and automotive environments.

VP2106N3-G Advantages vs Typical Alternatives

This MOSFET offers a superior combination of low on-resistance and high current capacity compared to typical alternatives, resulting in improved efficiency and reduced thermal stress. Its fast switching characteristics lower switching losses, making it well-suited for power-sensitive applications. Additionally, the broad temperature rating and reliable avalanche energy handling enhance durability, providing a dependable solution for demanding industrial and automotive power management needs.

Typical Applications

• DC-DC converters in automotive power systems, where efficient voltage regulation and thermal stability are critical to overall vehicle performance and reliability.
• Power management modules requiring fast switching and low conduction losses to maximize energy efficiency in industrial electronics.
• Battery management systems that benefit from the device??s high continuous current capability and robust operating temperature range.
• Motor control circuits demanding reliable switching components capable of handling high current loads in compact form factors.

VP2106N3-G Brand Info

Produced by a leading semiconductor manufacturer, this MOSFET integrates advanced silicon technology optimized for power efficiency and reliability. The product is part of a broader portfolio designed to meet stringent automotive and industrial standards, ensuring quality and consistency in high-volume production environments. The design emphasizes ease of integration and robust performance, supporting engineers in developing compact, efficient power solutions.

FAQ

What is the maximum voltage rating of this MOSFET?

The device supports a maximum drain-to-source voltage of 30 V, making it suitable for low-voltage power switching applications commonly found in automotive and industrial systems.

How does the low on-resistance benefit system design?

Low on-resistance reduces conduction losses during operation, which improves overall energy efficiency and reduces heat generation. This leads to smaller cooling requirements and longer component lifespan.

What package type does this MOSFET come in?

It is offered in a compact surface-mount package designed to facilitate high-density PCB layouts and efficient thermal dissipation, suitable for space-constrained applications.

Is this MOSFET suitable for high-temperature environments?

Yes, it operates reliably across a wide junction temperature range from -55 ??C up to +150 ??C, making it compatible with harsh environments typical in automotive and industrial settings.

What is the gate charge characteristic and why is it important?

The total gate charge is low, approximately 10 nC, enabling faster switching speeds. This reduces switching losses and improves efficiency, especially important in high-frequency power conversion circuits.