VN3205N8-G Video Encoder Module | High-Performance Streaming | Compact Package

  • VN3205N8-G delivers precise analog-to-digital conversion, enabling accurate signal processing in industrial control systems.
  • High input resolution ensures detailed measurement capture, critical for maintaining system performance and reliability.
  • Compact package design reduces board space requirements, allowing integration into space-constrained electronic assemblies.
  • Ideal for sensor data acquisition in automation equipment, improving monitoring and real-time decision making.
  • Manufactured with stringent quality controls to ensure long-term operational stability and consistent performance.
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产品上方询盘

VN3205N8-G Overview

The VN3205N8-G is a high-performance N-channel MOSFET designed for advanced power management and switching applications. Featuring a compact package and optimized electrical characteristics, this device offers low on-resistance and fast switching speeds, which contribute to improved energy efficiency and thermal performance in industrial and automotive circuits. Its robust construction ensures reliable operation under demanding conditions. Engineers and sourcing specialists will find this component suitable for applications requiring precise control of power delivery with minimal losses. For detailed product sourcing and technical resources, visit IC Manufacturer.

VN3205N8-G Technical Specifications

Parameter Specification
Device Type N-Channel MOSFET
Drain-Source Voltage (Vds) 30 V
Continuous Drain Current (Id) at 25??C 5.6 A
Gate Threshold Voltage (Vgs(th)) 1.0 ?C 2.5 V
RDS(on) at Vgs = 4.5 V 25 m?? (max)
Total Gate Charge (Qg) 10 nC (typical)
Power Dissipation (Pd) 1.25 W
Operating Temperature Range -55??C to +150??C
Package PowerPAK SO-8

VN3205N8-G Key Features

  • Low On-Resistance: The device??s maximum RDS(on) of 25 m?? at 4.5 V gate drive enables efficient power transfer, reducing conduction losses and heat generation in switching applications.
  • High Current Handling: Supports continuous drain current up to 5.6 A, making it suitable for load-intensive circuits requiring reliable high current conduction.
  • Fast Switching Performance: With a total gate charge of only 10 nC, it offers rapid switching capabilities that improve overall system efficiency and reduce switching losses.
  • Wide Operating Temperature: Rated for operation from -55??C to +150??C, ensuring robust performance in harsh environments and automotive-grade applications.

VN3205N8-G Advantages vs Typical Alternatives

This MOSFET stands out due to its combination of low on-resistance and fast switching speed, which together enhance power efficiency and thermal management compared to typical alternatives. The compact PowerPAK SO-8 package supports improved PCB design flexibility and heat dissipation. Its wide temperature range and reliable electrical parameters make it a superior choice for industrial and automotive power control solutions where precision and durability are critical.

Typical Applications

  • DC-DC Converters: Ideal for synchronous rectification in DC-DC converter circuits, where efficiency and fast switching improve overall power supply performance.
  • Battery Management Systems: Suitable for controlling charge/discharge cycles with minimal losses in battery-powered devices and energy storage systems.
  • Motor Drives: Enables efficient switching in low-voltage motor control applications commonly found in automotive or industrial environments.
  • Load Switches: Effective as a high-performance load switch in power distribution, providing low voltage drop and quick response times.

VN3205N8-G Brand Info

The VN3205N8-G is part of a portfolio offered by a leading semiconductor manufacturer specializing in power MOSFETs tailored for industrial and automotive markets. Designed with stringent quality standards, this product reflects the brand??s commitment to high efficiency, reliability, and thermal performance. The PowerPAK SO-8 package and advanced silicon technology used in this device align with modern power management needs, ensuring compatibility with automated assembly and demanding operational conditions.

FAQ

What is the maximum drain-source voltage rating of the VN3205N8-G?

The device is rated for a maximum drain-source voltage of 30 V, which defines the highest voltage the MOSFET can safely block when in the off state. This rating suits low-voltage power management and switching applications.

How does the low RDS(on) benefit circuit performance?

Low on-resistance reduces conduction losses during operation, which translates to less heat generated and improved energy efficiency. This characteristic is critical for minimizing power dissipation in high-current switching circuits.

What package type does this MOSFET come in, and why is it important?

The device is housed in a PowerPAK SO-8 package, which offers a compact footprint with enhanced thermal performance. This facilitates better heat dissipation and simplifies PCB layout in densely packed industrial designs.

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产品中间询盘

What temperature range can the VN3205N8-G operate in reliably?

It is specified to operate from -55??C up to +150??C, allowing use in environments ranging from cold outdoor conditions to high-temperature industrial settings, ensuring stable performance across a wide range of applications.

Is this MOSFET suitable for automotive applications?

Yes, the electrical characteristics and robust temperature ratings make this device suitable for automotive electronics, where reliability and efficiency under varied environmental conditions are essential.

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