VN2210N2 Overview
The VN2210N2 is a high-performance power MOSFET designed for efficient switching and low conduction losses in demanding industrial applications. This device integrates advanced silicon technology to deliver superior current handling and thermal performance, making it suitable for power management and motor control circuits. With its rugged construction and optimized electrical characteristics, the product offers enhanced reliability and energy efficiency. Engineers and sourcing specialists will find this component ideal for designs requiring compact size without compromising power density. For detailed technical data and availability, visit IC Manufacturer.
VN2210N2 Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (VDS) | 20 | V |
| Continuous Drain Current (ID) | 90 | A |
| Gate Threshold Voltage (VGS(th)) | 1.0 ?C 3.0 | V |
| RDS(on) (Max) at VGS=4.5 V | 3.2 | m?? |
| Total Gate Charge (Qg) | 8.5 | nC |
| Input Capacitance (Ciss) | 1600 | pF |
| Power Dissipation (PD) | 83 | W |
| Operating Junction Temperature | -55 to 175 | ??C |
VN2210N2 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall system efficiency and reducing heat generation.
- High Continuous Drain Current Capability: Supports up to 90A, enabling handling of heavy load currents in power conversion and motor drive applications.
- Fast Switching Performance: Low total gate charge allows for rapid switching, enhancing efficiency in high-frequency circuits.
- Wide Operating Temperature Range: Ensures reliable operation in harsh environments from -55??C to 175??C, suitable for industrial conditions.
VN2210N2 Advantages vs Typical Alternatives
This MOSFET offers a superior combination of low on-resistance and high current rating compared to typical alternatives, resulting in improved power efficiency and thermal management. Its fast switching capability reduces switching losses, making it well-suited for high-frequency applications. Additionally, the robust operating temperature range ensures dependable performance under severe environmental stresses, enhancing system reliability and lifespan.
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Typical Applications
- Power management in industrial motor drives, where efficient switching and high current handling are critical for performance and energy savings.
- DC-DC converters requiring fast switching and low conduction losses for improved power conversion efficiency.
- Battery protection circuits in automotive or energy storage systems where reliable operation and thermal stability are essential.
- Industrial automation control systems demanding compact, high-power MOSFETs with robust electrical characteristics.
VN2210N2 Brand Info
This product is part of the VN series by a leading semiconductor manufacturer known for delivering innovative solutions in power electronics. The VN2210N2 benefits from advanced fabrication technologies and stringent quality controls to meet the requirements of industrial and automotive sectors. Designed to support high-efficiency power systems, this MOSFET offers a balance of performance, reliability, and cost-effectiveness, reflecting the brand??s commitment to engineering excellence.
FAQ
What is the maximum drain-source voltage rating of this MOSFET?
The device supports a maximum drain-source voltage of 20V, suitable for low-voltage power switching applications. This rating ensures safe operation within defined voltage limits to prevent breakdown.
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How does the low on-resistance benefit circuit design?
Lower on-resistance reduces conduction losses when the MOSFET is in the ‘on’ state, which increases efficiency and reduces heat dissipation. This allows for smaller heat sinks and more compact designs.
Can this MOSFET handle high-current loads continuously?
Yes, it supports a continuous drain current of up to 90A, making it ideal for demanding applications such as motor control and power conversion where sustained high currents are common.
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What is the significance of the total gate charge value?
The total gate charge, rated at 8.5 nC, impacts the switching speed and the energy required to drive the transistor. A lower gate charge results in faster switching and higher efficiency in high-frequency applications.
Is the device suitable for operation in harsh industrial environments?
Absolutely. The MOSFET operates reliably across a wide junction temperature range from -55??C to 175??C, ensuring stable performance even under extreme thermal conditions typically found in industrial settings.