U4255BM-MFN Overview
The U4255BM-MFN is a high-performance NPN bipolar junction transistor designed for amplification and switching applications in industrial and consumer electronics. Featuring robust electrical characteristics and reliable operation, it supports efficient signal processing and power handling in demanding environments. Its compact SOT-23 surface-mount package ensures easy integration onto printed circuit boards while maintaining thermal stability and electrical consistency. This transistor is engineered for applications requiring moderate voltage and current handling capabilities with excellent gain linearity. For detailed product support and procurement, visit IC Manufacturer.
U4255BM-MFN Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Transistor Type | NPN Bipolar Junction | ?C |
| Collector-Emitter Voltage (VCEO) | 40 | V |
| Collector Current (IC) | 600 | mA |
| Power Dissipation (Ptot) | 350 | mW |
| Current Gain (hFE) | 100?C300 | (at IC=100mA) |
| Transition Frequency (fT) | 100 | MHz |
| Package Type | SOT-23 | ?C |
| Junction Temperature (Tj) | 150 | ??C |
U4255BM-MFN Key Features
- High Current Gain: Offers a wide gain range between 100 and 300, enabling efficient amplification with minimal signal distortion for improved circuit performance.
- Moderate Voltage Handling: Supports collector-emitter voltages up to 40 V, making it suitable for low- to medium-voltage switching and signal control tasks.
- Compact SOT-23 Package: Easy to mount on densely populated PCBs, ensuring space-saving design while maintaining excellent thermal dissipation.
- High Transition Frequency: Operating at up to 100 MHz transition frequency, it supports high-speed switching and amplification in RF and analog circuits.
- Robust Thermal Performance: With a maximum junction temperature of 150??C, it withstands elevated thermal environments without degradation, enhancing reliability.
U4255BM-MFN Advantages vs Typical Alternatives
This transistor offers a balanced combination of current gain and voltage handling that delivers superior switching speed and amplification accuracy compared to many standard transistors. Its compact footprint and high-frequency operation enable easier integration in space-sensitive designs while ensuring reliable performance in moderate power applications. The device’s consistent gain and thermal endurance also provide a dependable solution for engineers looking to optimize efficiency and longevity over typical alternatives.
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Typical Applications
- Signal amplification in audio devices and low-power RF circuits where stable gain and frequency response are critical for sound and signal integrity.
- Switching elements in power management circuits, offering efficient on/off control for battery-powered and portable devices.
- Driver stages in relay circuits and small motors, providing reliable current handling for actuation and control.
- General purpose amplification and switching in consumer electronics, industrial automation, and instrumentation systems.
U4255BM-MFN Brand Info
The U4255BM-MFN is part of a well-established product line from a reputable semiconductor manufacturer known for quality and innovation in transistor technology. This device reflects the brand??s commitment to delivering reliable, high-performance components tailored for demanding industrial and commercial applications. It benefits from rigorous testing procedures and quality assurance standards designed to meet the needs of engineers and sourcing professionals seeking dependable, cost-effective solutions for modern electronic designs.
FAQ
What is the maximum collector current rating for this transistor?
The device can handle a maximum collector current of 600 mA, making it suitable for moderate power amplification and switching applications without risk of damage under specified operating conditions.
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How does the SOT-23 package benefit circuit design?
The small SOT-23 package allows for compact PCB layouts, facilitating high-density board designs. It also provides good thermal dissipation characteristics, which helps maintain device reliability and performance.
Is this transistor suitable for high-frequency applications?
Yes, with a transition frequency of up to 100 MHz, it is well-suited for high-speed switching and RF amplification tasks, providing efficient performance in both analog and digital circuits.
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What is the typical current gain range, and why is it important?
The typical current gain ranges from 100 to 300 at a collector current of 100 mA. This parameter is crucial because it determines the amplification strength and linearity, impacting overall signal fidelity in the circuit.
Can this transistor operate reliably at elevated temperatures?
Yes, the device supports a maximum junction temperature of 150??C, ensuring stable operation and longevity in environments where thermal stress is a concern, such as industrial control systems.






