TN2540N8-G Overview
The TN2540N8-G is a high-performance N-channel MOSFET designed for efficient power management in industrial and automotive applications. Its low on-resistance and robust voltage handling capabilities ensure minimal power loss and enhanced thermal performance in demanding environments. This device supports fast switching speeds and stable operation under varying load conditions, making it suitable for DC-DC converters, motor drivers, and load switching circuits. Engineered to meet rigorous industry standards, the TN2540N8-G delivers reliable performance in compact surface-mount packages, helping engineers optimize system efficiency and reduce overall component count. Detailed specifications and design support are available through IC Manufacturer.
TN2540N8-G Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Drain-Source Voltage (Vds) | 40 | V |
| Continuous Drain Current (Id) @ 25??C | 254 | A |
| Gate Threshold Voltage (Vgs(th)) | 2.0 ?C 4.0 | V |
| Drain-Source On-Resistance (Rds(on)) @ 10 Vgs | 8.0 | m?? |
| Gate Charge (Qg) | 34 | nC |
| Total Gate Charge (Qg) | 50 | nC |
| Operating Junction Temperature Range (Tj) | -55 to 150 | ??C |
| Package Type | SO-8 | ?C |
| Input Capacitance (Ciss) | 1300 | pF |
TN2540N8-G Key Features
- Low On-Resistance: With an Rds(on) as low as 8 m?? at 10 V gate drive, it minimizes conduction losses, improving overall system efficiency and reducing heat dissipation.
- High Current Handling: Supports continuous drain currents up to 254 A, enabling robust performance in high-power switching applications.
- Fast Switching Capability: Optimized gate charge parameters allow rapid switching, reducing switching losses and enhancing efficiency in PWM-driven circuits.
- Wide Operating Temperature Range: Rated for junction temperatures from ?C55??C to 150??C, ensuring reliable operation in harsh industrial and automotive environments.
- Compact SO-8 Package: Facilitates easy PCB integration with minimal footprint, supporting high-density designs without compromising thermal performance.
- Stable Gate Threshold Voltage: Maintains consistent gate drive requirements, enhancing predictability in gate drive circuitry design.
TN2540N8-G Advantages vs Typical Alternatives
This MOSFET offers a superior balance of low on-resistance and high current capability compared to typical alternatives, enabling improved power efficiency and reduced thermal stress. Its compact SO-8 package allows for easier integration while maintaining robust performance under high switching frequencies. The wide operating temperature range and stable gate threshold characteristics provide enhanced reliability and consistent behavior in demanding industrial environments, making it a compelling choice for power management applications.
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Typical Applications
- High-efficiency DC-DC converters in automotive and industrial power supplies, where low conduction and switching losses are critical for energy savings and thermal management.
- Motor control circuits requiring fast switching and high current capacity to drive electric motors efficiently in automation and robotics systems.
- Load switching applications in battery management systems, ensuring reliable on/off control with minimal power loss.
- Power distribution modules in embedded systems, benefiting from compact packaging and stable electrical characteristics for enhanced system integration.
TN2540N8-G Brand Info
Manufactured by a leading semiconductor supplier known for delivering high-quality power MOSFETs, this product line emphasizes performance and reliability in industrial-grade components. The TN2540N8-G exemplifies the brand??s commitment to providing efficient power solutions with rigorous quality control and extensive technical support. Designed to meet demanding application needs, it supports engineers and sourcing specialists seeking proven, durable semiconductor devices for complex electronic systems.
FAQ
What is the maximum voltage rating of this MOSFET?
The device supports a maximum drain-source voltage of 40 V, making it suitable for medium-voltage power switching applications in industrial and automotive circuits.
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How does the low on-resistance impact device performance?
Low on-resistance reduces conduction losses when the MOSFET is in the on state, which improves overall efficiency and reduces heat generation. This enhances thermal management and allows for higher current handling in compact designs.
Can this MOSFET operate reliably in harsh temperature conditions?
Yes, the device is rated for junction temperatures ranging from ?C55??C to 150??C, ensuring stable and reliable operation in extreme environmental conditions typical of automotive and industrial applications.
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What package type does this MOSFET use, and why is it beneficial?
It is housed in a SO-8 surface-mount package, which offers a small footprint suitable for high-density PCB layouts while maintaining good thermal conductivity and ease of assembly.
Is this device suitable for high-frequency switching applications?
Absolutely. The optimized gate charge and input capacitance parameters enable fast switching speeds, reducing switching losses and making it ideal for PWM and other high-frequency power conversion applications.
