TE33-12-16S-F0 Overview
The TE33-12-16S-F0 is a high-performance semiconductor device designed for precision industrial applications requiring robust power handling and efficient thermal management. Featuring a compact form factor and optimized electrical characteristics, this device supports reliable operation in demanding environments. Its carefully engineered structure ensures improved switching speeds and minimized losses, making it suitable for power conversion and control circuits. Available through IC Manufacturer, the TE33-12-16S-F0 delivers a balance of efficiency, durability, and integration ease for engineers and sourcing specialists focused on enhancing system performance.
TE33-12-16S-F0 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | Power MOSFET |
| Drain-Source Voltage (Vds) | 120 V |
| Continuous Drain Current (Id) | 33 A |
| Gate Threshold Voltage (Vgs th) | 2.0 – 4.0 V |
| Rds(on) (Max) at Vgs=10 V | 16 m?? |
| Total Gate Charge (Qg) | 45 nC |
| Power Dissipation (Pd) | 75 W |
| Operating Temperature Range | -55??C to +150??C |
| Package Type | TO-220 Full Pack |
TE33-12-16S-F0 Key Features
- High current capacity: Supports continuous drain current up to 33 A, enabling efficient handling of heavy loads in power conversion systems.
- Low on-resistance (Rds(on)): With a maximum 16 m??, the device minimizes conduction losses, improving overall system efficiency and thermal performance.
- Wide operating temperature range: Rated for -55??C to +150??C, ensuring reliable operation in harsh industrial environments.
- Optimized gate charge: The total gate charge of 45 nC facilitates faster switching speeds, beneficial for high-frequency applications.
TE33-12-16S-F0 Advantages vs Typical Alternatives
This device offers a compelling combination of low Rds(on) and high current capability compared to standard MOSFETs, resulting in reduced power losses and enhanced reliability. Its robust thermal characteristics and compact TO-220 package enable easier integration into existing designs, delivering superior performance in power management and switching efficiency without compromising durability.
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Typical Applications
- Power supply modules in industrial automation systems, where efficient high-current switching and thermal stability are critical for continuous operation.
- Motor control circuits requiring precise current handling and fast switching for variable speed drives.
- DC-DC converters in renewable energy systems, leveraging low conduction losses for improved energy efficiency.
- General purpose switching applications in power electronics demanding reliable performance under varying load and temperature conditions.
TE33-12-16S-F0 Brand Info
The TE33-12-16S-F0 is a premium power MOSFET offered by a leading semiconductor manufacturer specializing in industrial-grade components. Engineered to meet stringent quality and performance standards, this product reflects the brand??s commitment to delivering reliable, high-efficiency devices optimized for demanding power management applications. Its proven technology and robust design support the requirements of engineers and sourcing specialists seeking dependable semiconductors for critical industrial systems.
FAQ
What is the maximum drain-source voltage rating of this device?
The maximum drain-source voltage (Vds) rating is 120 V, allowing the device to handle moderate voltage levels common in industrial power circuits safely.
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How does the on-resistance affect device performance?
Lower on-resistance reduces conduction losses during operation, which enhances efficiency and reduces heat generation. At a maximum of 16 m??, this device minimizes power loss, improving overall system reliability.
What package type does this MOSFET use, and why is it beneficial?
The device is housed in a TO-220 full pack package. This package