T9GS5L14-9 Overview
The T9GS5L14-9 is a high-performance semiconductor device designed for industrial and automotive applications demanding precision and reliability. It integrates advanced technology to ensure efficient switching capabilities with low power dissipation, making it ideal for power management and control systems. Its robust design supports sustained operation under harsh environmental conditions, optimizing system stability and longevity. Manufactured by a leading IC Manufacturer, this component offers a balanced combination of electrical performance and thermal management, enhancing overall system efficiency in demanding industrial environments.
T9GS5L14-9 Technical Specifications
| Parameter | Specification |
|---|---|
| Maximum Drain-Source Voltage (Vds) | 40 V |
| Continuous Drain Current (Id) | 5.1 A |
| Gate Threshold Voltage (Vgs(th)) | 1.0 ?C 3.0 V |
| Static Drain-Source On-Resistance (Rds(on)) | 14 m?? @ Vgs = 4.5 V |
| Gate Charge (Qg) | 12 nC |
| Total Power Dissipation (Pd) | 1.25 W |
| Operating Junction Temperature (Tj) | -55 to 150 ??C |
| Package Type | Power SO-8 |
T9GS5L14-9 Key Features
- Low On-Resistance: Ensures minimal conduction losses, improving energy efficiency and reducing heat generation in power switching applications.
- Wide Operating Voltage Range: Supports up to 40 V drain-source voltage, suitable for various industrial control systems requiring reliable high-voltage handling.
- Fast Switching Speeds: Features a low gate charge, enabling rapid response times and efficient operation in high-frequency circuits.
- Thermal Robustness: Designed for operation up to 150 ??C junction temperature, providing stability and reliability in harsh industrial environments.
T9GS5L14-9 Advantages vs Typical Alternatives
This device offers superior switching efficiency through its low on-resistance and fast gate charge characteristics, reducing power losses compared to conventional MOSFETs. Its enhanced thermal tolerance ensures dependable performance in demanding conditions, while the compact Power SO-8 package facilitates easy integration into space-constrained designs. Together, these factors provide a notable advantage in precision control and power management applications.
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Typical Applications
- Industrial motor control systems, where precise power switching and thermal stability are critical for operational reliability and efficiency in variable load conditions.
- DC-DC converters requiring fast switching performance and low conduction losses for improved power conversion efficiency.
- Battery management systems in automotive electronics, offering robust voltage handling and enhanced thermal performance for extended component lifespan.
- General-purpose power switching in industrial automation, supporting high-frequency operation and compact design integration.
T9GS5L14-9 Brand Info
This product is part of a comprehensive portfolio from a globally recognized IC Manufacturer specializing in semiconductor solutions for industrial and automotive sectors. The device reflects the brand’s commitment to delivering high-quality, reliable components designed with advanced semiconductor technology and rigorous testing standards. It combines innovation with proven manufacturing processes to meet stringent industry requirements.
FAQ
What is the maximum voltage rating for this MOSFET?
The maximum drain-source voltage rating is 40 V, allowing the device to handle moderate voltage levels typical in industrial power control applications without risk of breakdown.
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How does the low on-resistance benefit system performance?
Low on-resistance reduces conduction losses during operation, which improves overall energy efficiency and reduces heat generation. This leads to longer device life and less need for extensive cooling solutions.
Can this component operate in high-temperature environments?
Yes, it is designed to function reliably with an operating junction temperature range from -55 ??C up to 150 ??C, ensuring stable performance even under elevated thermal stress.


