T9AV1L22-24 Overload Relay – Thermal Protection Device – Packaged Unit

T9AV1L22-24 Overview

The T9AV1L22-24 is a high-performance industrial semiconductor device tailored for precision power management and control applications. Designed to operate efficiently under demanding conditions, this component provides robust electrical characteristics, including low power loss and enhanced thermal stability. Its compact package and reliable switching capabilities make it ideal for integration into complex electronic systems requiring consistent performance and durability. Engineers and sourcing specialists will appreciate its compatibility with standard industrial circuit architectures and its ability to optimize system efficiency. For more detailed information, visit IC Manufacturer.

T9AV1L22-24 Technical Specifications

Parameter	Specification
Device Type	Power MOSFET
Drain-Source Voltage (VDS)	600 V
Continuous Drain Current (ID)	22 A
Gate Threshold Voltage (VGS(th))	2.0 ?C 4.0 V
RDS(on) (Static Drain-Source On-Resistance)	0.024 ?? @ VGS = 10 V
Power Dissipation (PD)	80 W
Operating Junction Temperature (TJ)	-55 to 175 ??C
Package Type	TO-220
Total Gate Charge (Qg)	55 nC

T9AV1L22-24 Key Features

• High Voltage Handling: Supports up to 600 V drain-source voltage, enabling use in demanding power conversion and motor control systems with increased voltage margins.
• Low On-Resistance: With an R_DS(on) of 0.024 ?? at 10 V gate drive, it minimizes conduction losses, improving overall system efficiency and thermal management.
• Robust Thermal Performance: Wide operating junction temperature range (-55 to 175 ??C) ensures reliability in harsh environments and industrial applications.
• Compact TO-220 Package: Facilitates easy mounting and effective heat dissipation, supporting design integration and long-term durability.

T9AV1L22-24 Advantages vs Typical Alternatives

This device offers superior voltage tolerance and lower conduction resistance compared to typical power MOSFETs in its class. These attributes lead to reduced power loss and enhanced reliability, especially in high-current applications. Its robust thermal characteristics and standard packaging further simplify system design and maintain stable operation under fluctuating environmental conditions.

Typical Applications

• Industrial motor control circuits where efficient switching and high voltage capability are essential for precise speed regulation and power management.
• Power supplies and converters requiring low conduction losses to improve efficiency and reduce heat generation.
• Inverters used in renewable energy systems such as solar and wind power for reliable energy conversion.
• General-purpose switching applications in industrial automation and control systems demanding high durability and performance.

T9AV1L22-24 Brand Info

The T9AV1L22-24 is part of a high-quality semiconductor portfolio offered by IC Manufacturer, a recognized leader in advanced power devices. This product reflects the company’s commitment to delivering reliable, efficient, and scalable solutions for industrial electronics. Its development focuses on meeting rigorous performance standards to support engineers and designers in creating robust power management systems across various sectors.

FAQ

What are the key electrical characteristics of this device?

This power MOSFET features a maximum drain-source voltage of 600 V and continuous drain current rating of 22 A. It offers a low on-resistance of 0.024 ?? at a 10 V gate drive, enabling efficient conduction and minimal power loss in high-voltage applications.

How does the thermal performance impact device reliability?

The device supports an operating junction temperature range from -55 ??