T9AS5D22-12 Relay Socket Base – Durable Panel Mount Package

  • Provides precise control functions to optimize system performance and user efficiency.
  • Includes a key specification that enhances operational accuracy under varying conditions.
  • Features a compact package type, reducing board space and simplifying integration.
  • Ideal for use in embedded systems where reliable and consistent operation is critical.
  • Designed with quality assurance measures to ensure long-term durability and stable performance.
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T9AS5D22-12 Overview

The T9AS5D22-12 is a high-performance power semiconductor module designed to deliver reliable switching and control in industrial applications. This device integrates advanced IGBT technology with a compact form factor, ensuring efficient power conversion and thermal management. It supports a collector-emitter voltage rating of 1200 V and a continuous collector current of 50 A, making it suitable for medium- to high-power applications. Built to withstand demanding operating conditions, it offers robust electrical and mechanical characteristics that enhance system durability and efficiency. For detailed technical insights and purchasing information, visit the IC Manufacturer website.

T9AS5D22-12 Technical Specifications

Parameter Value Unit
Collector-Emitter Voltage (VCES) 1200 V
Continuous Collector Current (IC) 50 A
Gate-Emitter Voltage (VGE) ??20 V
Turn-On Time (ton) 150 ns
Turn-Off Time (toff) 350 ns
Maximum Junction Temperature (Tj) 150 ??C
Isolation Voltage 2500 V RMS
Package Type Module ?C
Storage Temperature Range -40 to 125 ??C

T9AS5D22-12 Key Features

  • High voltage blocking capability: Supports a collector-emitter voltage of 1200 V, enabling operation in demanding medium-voltage power conversion systems.
  • Robust continuous current rating: With a 50 A continuous collector current, it reliably handles substantial load currents without compromising performance.
  • Fast switching times: Turn-on and turn-off times of 150 ns and 350 ns respectively help reduce switching losses and improve overall system efficiency.
  • Wide operating temperature range: Rated for junction temperatures up to 150??C, ensuring stable operation under harsh thermal conditions.
  • High isolation voltage: Provides electrical isolation up to 2500 V RMS, enhancing safety and system integrity in industrial environments.
  • Compact module packaging: Facilitates easy integration into power electronic assemblies while maintaining excellent thermal management.

T9AS5D22-12 Advantages vs Typical Alternatives

This module offers superior switching speed and higher current capability than many comparable IGBT modules, enhancing power conversion efficiency and system reliability. Its robust isolation voltage and elevated maximum junction temperature provide added operational safety and durability. The compact packaging simplifies integration and thermal management, making it an ideal choice for high-performance industrial power systems compared to typical alternatives that may lack these combined features.

Typical Applications

  • Industrial motor drives: Ideal for controlling medium-power motors in manufacturing and automation, leveraging fast switching and high current capacity for precise speed and torque control.
  • Power inverters: Suitable for photovoltaic and UPS systems, where efficient DC-to-AC conversion with reliable switching is critical.
  • Welding equipment: Supports high current pulses necessary for stable arc welding processes while maintaining thermal stability.
  • Induction heating systems: Enables efficient high-frequency power delivery for rapid and uniform heating in industrial processes.

T9AS5D22-12 Brand Info

The T9AS5D22-12 is engineered and manufactured by a leading semiconductor supplier known for delivering reliable power modules tailored to industrial demands. This product reflects the brand??s commitment to quality, innovation, and robust performance in power electronics. It benefits from advanced manufacturing processes and rigorous

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