STTH310UFY Overview
The STTH310UFY is a high-performance ultrafast diode designed to deliver superior switching capabilities and enhanced efficiency in power conversion systems. With a maximum repetitive peak reverse voltage of 1000 V and a forward current rating of 3 A, this semiconductor device is engineered for demanding industrial applications that require reliable rectification and fast recovery times. Its robust construction minimizes switching losses, making it ideal for use in power supplies, inverters, and motor drives. The STTH310UFY offers engineers and sourcing specialists a dependable solution that balances performance and durability, backed by stringent quality standards from IC Manufacturer.
STTH310UFY Technical Specifications
| Parameter | Value | Unit |
|---|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 1000 | V |
| Average Forward Current (IF(AV)) | 3 | A |
| Surge Non-Repetitive Forward Current (IFSM) | 80 | A |
| Forward Voltage Drop (VF) at 3 A | 1.7 | V |
| Reverse Recovery Time (trr) | 75 | ns |
| Operating Junction Temperature (Tj) | -65 to +175 | ??C |
| Storage Temperature Range (Tstg) | -65 to +175 | ??C |
| Package Type | TO-220AC | – |
STTH310UFY Key Features
- Ultrafast Recovery Time: The 75 ns reverse recovery time significantly reduces switching losses, enhancing overall system efficiency in high-frequency applications.
- High Voltage Blocking Capability: Rated for 1000 V VRRM, it supports demanding power conversion environments with reliable voltage withstand capability.
- Robust Surge Current Handling: Capable of withstanding surge currents up to 80 A, ensuring durability under transient conditions and improving system reliability.
- Low Forward Voltage Drop: A forward voltage of 1.7 V at nominal current reduces conduction losses, contributing to lower thermal dissipation and improved energy efficiency.
Typical Applications
- Rectification in switch-mode power supplies (SMPS) where fast switching and high voltage are critical for efficient power conversion.
- Freewheeling diode in motor drive circuits to protect switching devices and ensure smooth current flow during commutation.
- Inverter circuits for renewable energy systems, providing reliable ultrafast switching performance under varying load conditions.
- Snubber circuits in industrial electronics to suppress voltage spikes, enhancing device longevity and system stability.
STTH310UFY Advantages vs Typical Alternatives
This diode offers superior ultrafast switching and high voltage ratings compared to standard recovery diodes, reducing switching losses and improving thermal performance. Its combination of low forward voltage drop and high surge current capability ensures efficient operation and enhanced reliability, making it a preferred choice over typical silicon rectifiers in high-frequency industrial power applications.
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STTH310UFY Brand Info
The STTH310UFY is manufactured by STMicroelectronics, a global leader in semiconductor technology known for innovation and quality. STMicroelectronics specializes in power semiconductors that address the needs of automotive, industrial, and consumer electronics markets. This ultrafast diode is part of ST??s broad portfolio designed to optimize power management and increase system efficiency in demanding applications. The company??s commitment to excellence ensures that this device meets stringent performance and reliability standards.
FAQ
What makes the STTH310UFY suitable for high-frequency applications?
The ultrafast reverse recovery time of 75 ns allows the diode to switch quickly between conducting and non-conducting states, minimizing switching losses and electromagnetic interference. This makes it highly suitable for use in high-frequency circuits such as switch-mode power supplies and inverters.
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Can the STTH310UFY handle surge currents, and why is this important?
Yes, it can handle surge currents up to 80 A non-repetitively. This capability is crucial for managing transient conditions like power surges or motor startups, preventing device failure and improving overall system robustness.
