STTH30L06GY-TR Overview
The STTH30L06GY-TR is a high-performance ultrafast diode designed for industrial power applications requiring efficient switching and high current capability. Featuring a maximum repetitive peak reverse voltage of 600 V and a forward current rating of 30 A, this device ensures reliable operation in demanding environments. Its ultrafast recovery time minimizes switching losses, making it suitable for use in power supplies, inverters, and motor drives. Packaged in a TO-220AC form factor, it facilitates straightforward integration into existing designs. This diode combines robust electrical specifications with durable construction, delivering dependable performance for engineers and sourcing specialists. For more detailed industrial semiconductor solutions, visit IC Manufacturer.
STTH30L06GY-TR Technical Specifications
| Parameter | Value |
|---|---|
| Maximum Repetitive Peak Reverse Voltage (VRRM) | 600 V |
| Average Rectified Forward Current (IF(AV)) | 30 A |
| Surge Non-Repetitive Forward Current (IFSM) | 250 A |
| Maximum Forward Voltage Drop (VF) at IF | 1.7 V (typical at 30 A) |
| Reverse Recovery Time (trr) | 75 ns (typical) |
| Junction Temperature Range (Tj) | -65??C to +175??C |
| Storage Temperature Range (Tstg) | -65??C to +175??C |
| Package Type | TO-220AC |
STTH30L06GY-TR Key Features
- Ultrafast Recovery Time: With a typical reverse recovery time of 75 ns, it reduces switching losses and electromagnetic interference, enhancing overall system efficiency.
- High Current Capability: Supports continuous forward current up to 30 A, ensuring robust handling of high power loads in industrial circuits.
- High Surge Current Tolerance: Can withstand surge currents up to 250 A, offering durability during transient load conditions and improving reliability.
- Wide Operating Temperature Range: Rated for junction temperatures from -65??C to +175??C, ensuring stable performance under harsh environmental conditions.
Typical Applications
- Switch mode power supplies (SMPS) where fast switching diodes are critical to reduce losses and improve efficiency.
- Inverter circuits for renewable energy systems requiring reliable ultrafast diodes to handle high-frequency switching.
- Motor drive circuits in industrial automation where rugged and efficient rectification is essential.
- Freewheeling diodes in power converters to protect switches and improve overall system reliability.
STTH30L06GY-TR Advantages vs Typical Alternatives
This ultrafast diode provides superior switching speed and lower reverse recovery time compared to standard rectifiers, reducing power dissipation and EMI in high-frequency applications. Its high surge current capacity and wide temperature tolerance offer enhanced reliability and robustness in industrial environments. These advantages make it preferable over conventional silicon diodes that may suffer from slower recovery and higher losses under similar conditions.
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STTH30L06GY-TR Brand Info
The STTH30L06GY-TR is a product from STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power semiconductors designed for industrial and automotive applications, providing devices that combine performance, efficiency, and reliability. This ultrafast diode is part of ST??s extensive portfolio aimed at optimizing power conversion and management in demanding environments, supported by comprehensive technical documentation and global support.
FAQ
What is the maximum repetitive peak reverse voltage for this diode?
The maximum repetitive peak reverse voltage (VRRM) for this diode is 600 V, which defines the highest voltage the diode can withstand in the reverse direction repeatedly without damage.
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What package type does this diode come in, and why is it important?
This device is housed in a TO-220AC package, which is widely used in power electronics due to its ease of mounting and effective heat dissipation, facilitating reliable thermal management in high current applications.
How does the reverse recovery time impact performance?
The reverse recovery time of 75 ns enables faster switching with reduced power losses and electromagnetic interference, making the diode suitable for high-frequency power conversion and improving overall system efficiency.
