STTH2002G-TR Diode Rectifier 20A 200V – STMicroelectronics TO-220 Package

  • STTH2002G-TR serves as a high-speed rectifier, enabling efficient current conversion in power circuits.
  • Its fast recovery time reduces switching losses, improving overall circuit performance and energy efficiency.
  • The compact package design supports board-space savings, facilitating integration into dense electronic assemblies.
  • Ideal for use in power supplies where fast switching and minimal heat generation enhance system reliability.
  • Manufactured to meet standard quality criteria, ensuring consistent operation under typical electrical stresses.
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STTH2002G-TR Overview

The STTH2002G-TR is a high-performance ultrafast diode designed for efficient rectification in industrial and power electronics applications. Featuring a repetitive peak reverse voltage of 200V and a forward current capability of 20A, this diode supports high-speed switching with minimal losses. Its robust construction and ultrafast recovery time make it ideal for use in power supplies, inverters, and motor drives. Packaged in a compact and reliable form factor, the device ensures improved system efficiency and thermal performance. For engineers and sourcing specialists, this component represents a reliable solution for demanding rectification tasks, available from IC Manufacturer.

STTH2002G-TR Technical Specifications

ParameterValueUnit
Repetitive Peak Reverse Voltage (VRRM)200V
Forward Continuous Current (IF)20A
Non-Repetitive Forward Surge Current (IFSM)150A
Reverse Recovery Time (trr)75ns
Maximum Forward Voltage Drop (VF) at 20A1.7V
Junction Temperature Range (Tj)-65 to +175??C
Storage Temperature Range (Tstg)-65 to +175??C
Package TypeTO-220AB?C

STTH2002G-TR Key Features

  • Ultrafast recovery time: Reduces switching losses and electromagnetic interference, improving overall system efficiency in high-frequency power circuits.
  • High forward current rating: Supports continuous currents up to 20A, enabling reliable operation in demanding rectification and power conversion applications.
  • Robust thermal performance: Wide junction temperature range ensures durability and longevity under harsh operating conditions.
  • Compact TO-220AB package: Facilitates easy integration and efficient heat dissipation in industrial systems.

Typical Applications

  • Power supply rectification in switch-mode power supplies (SMPS), where fast recovery diodes reduce losses and improve efficiency.
  • Freewheeling diode use in motor drive circuits to protect switching devices and enhance performance.
  • Inverter circuits requiring ultrafast switching components to manage high-frequency operation.
  • Snubber circuits in power converters, providing protection by clamping voltage spikes during switching events.

STTH2002G-TR Advantages vs Typical Alternatives

This diode offers significant advantages in ultrafast switching speed and high current handling compared to standard rectifiers. Its low forward voltage drop reduces conduction losses, boosting power efficiency. Additionally, the wide junction temperature range and rugged packaging enhance reliability in industrial environments. These factors make it a more effective choice than conventional diodes for high-frequency power conversion and demanding rectification tasks.

STTH2002G-TR Brand Info

The STTH2002G-TR is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics provides a broad portfolio of power semiconductors optimized for industrial and consumer applications. This ultrafast diode series is part of their commitment to high-efficiency power management components, ensuring quality, robustness, and performance. The product benefits from ST??s advanced silicon technology and rigorous testing standards, making it suitable for integration into critical industrial systems.

FAQ

What is the maximum repetitive peak reverse voltage of this diode?

The diode supports a maximum repetitive peak reverse voltage of 200V, making it suitable for medium-voltage rectification and protection in power electronic circuits.

What is the significance of the ultrafast recovery time in this device?

The ultrafast recovery time of 75 nanoseconds minimizes switching losses and reduces electromagnetic interference, which is

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