STTH1003SB-TR – STMicroelectronics Fast Recovery Diode, DO-201AD Package

  • Provides fast switching diode functionality, enabling efficient rectification for improved circuit performance.
  • Features a high voltage rating that ensures reliable operation under demanding electrical conditions.
  • Encased in a compact package that facilitates board-space savings and simplifies integration into tight layouts.
  • Ideal for use in power supply circuits, where it enhances energy efficiency and reduces heat generation.
  • Manufactured to meet strict quality standards, ensuring consistent reliability and long service life.
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STTH1003SB-TR Overview

The STTH1003SB-TR is a high-performance ultrafast diode designed for demanding power electronics applications. Featuring a maximum repetitive peak reverse voltage of 1000 V and a forward current rating of 10 A, this device delivers efficient switching performance while minimizing power loss. Its ultrafast recovery time enhances system reliability and reduces electromagnetic interference (EMI). Packaged in a robust DO-201AD case, it suits industrial environments where durability is critical. The STTH1003SB-TR is ideal for use in power supplies, inverters, and motor drives, providing engineers and sourcing specialists with a reliable, cost-effective solution. For more information, visit IC Manufacturer.

STTH1003SB-TR Technical Specifications

ParameterValueUnits
Maximum Repetitive Peak Reverse Voltage (VRRM)1000V
Average Forward Current (IF(AV))10A
Peak Forward Surge Current (IFSM)150A
Forward Voltage Drop (VF) at IF=10A1.7V
Reverse Recovery Time (trr)75ns
Junction Temperature Range (Tj)-65 to +175??C
Storage Temperature Range (Tstg)-65 to +175??C
PackageDO-201AD

STTH1003SB-TR Key Features

  • Ultrafast Recovery Time: With a recovery time of 75 ns, it significantly reduces switching losses and improves efficiency in high-frequency applications.
  • High Voltage Capability: Rated for 1000 V repetitive peak reverse voltage, enabling use in robust power systems requiring strong voltage tolerance.
  • High Surge Current Handling: Supports peak forward surge currents up to 150 A, enhancing reliability during transient load conditions.
  • Thermal Stability: Operates over a wide junction temperature range (-65??C to +175??C), ensuring dependable performance in harsh industrial environments.

Typical Applications

  • Switch mode power supplies (SMPS) where ultrafast recovery diodes improve efficiency and reduce electromagnetic interference for better system performance.
  • Motor control circuits that require robust current handling and fast switching for precise speed and torque regulation.
  • Inverter circuits used in industrial drives and renewable energy systems benefiting from low forward voltage drop and high voltage tolerance.
  • Freewheeling diodes in power converters, protecting switching elements and maintaining circuit stability during rapid switching events.

STTH1003SB-TR Advantages vs Typical Alternatives

This ultrafast diode offers a superior combination of high voltage rating and fast recovery time, making it more efficient than standard fast diodes. Its low forward voltage drop minimizes conduction losses, enhancing overall system efficiency. Compared to alternatives, it provides higher surge current capability and wider temperature operation, increasing reliability and lifespan in industrial power electronics applications.

STTH1003SB-TR Brand Info

The STTH1003SB-TR is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics is renowned for its innovation in discrete components, power devices, and integrated circuits. The STTH1003SB-TR diode is part of ST??s extensive portfolio of ultrafast diodes tailored for power conversion and industrial applications, reflecting the company??s commitment to quality, performance, and long-term reliability.

FAQ

What does the “ultrafast” recovery time mean for this diode?

Ultrafast recovery time refers to the diode??s ability to switch from conducting to blocking state in a very short duration, specifically 75 nanoseconds for this device. This reduces switching losses and electromagnetic interference, making it ideal for high-frequency power electronics.

Can the STTH1003SB-TR be used in high-temperature environments?

Yes, it supports a wide junction temperature range from -65??C to +175??C, making it suitable for harsh industrial and automotive environments where temperature extremes are common.

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