STT4P3LLH6 MOSFET Transistor – STMicroelectronics – TO-220 Package

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  • Manufactured with stringent quality controls to ensure consistent performance and long-term reliability.
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STT4P3LLH6 Overview

The STT4P3LLH6 is a high-performance P-channel MOSFET designed for efficient power switching applications. With its low on-resistance and robust voltage rating, it ensures minimal conduction losses and reliable operation in demanding industrial environments. This component excels in power management circuits, offering excellent thermal performance and fast switching capabilities. The device??s compact package facilitates easy integration into space-constrained designs, making it ideal for engineers and sourcing specialists focused on enhancing system efficiency and longevity. For detailed product sourcing and technical support, visit IC Manufacturer.

STT4P3LLH6 Technical Specifications

ParameterSpecification
Device TypeP-Channel MOSFET
Drain-Source Voltage (Vds)-30 V
Continuous Drain Current (Id)-4.3 A
Drain-Source On-Resistance (Rds(on))15 m?? @ Vgs = -4.5 V
Gate Threshold Voltage (Vgs(th))-0.4 V (typical)
Total Gate Charge (Qg)6.5 nC
Power Dissipation (Pd)1.5 W
Operating Temperature Range-55 ??C to 150 ??C
PackageSuperSOT-6 (SOT-563)

STT4P3LLH6 Key Features

  • Low on-resistance: Minimizes conduction losses, enhancing overall system efficiency and reducing heat generation.
  • High drain current capability: Supports continuous currents up to -4.3 A, suitable for demanding industrial power applications.
  • Compact SuperSOT-6 package: Enables space-saving PCB layouts without compromising thermal performance or reliability.
  • Fast switching speed: Reduces switching losses, beneficial in high-frequency power conversion circuits.
  • Wide operating temperature range: Ensures stable operation in harsh industrial environments from -55 ??C to 150 ??C.
  • Low gate charge: Facilitates efficient driving with reduced gate drive power requirements.

Typical Applications

  • DC-DC converters and voltage regulators, where efficient power switching is critical to maintain low energy losses and thermal management.
  • Load switching in industrial automation systems requiring reliable high-current handling.
  • Battery protection and management circuits, offering low voltage drop and stable performance under varying load conditions.
  • Power management in telecommunications equipment demanding compact, high-efficiency MOSFET solutions.

STT4P3LLH6 Advantages vs Typical Alternatives

This device offers a competitive advantage with its low on-resistance and high current capacity, resulting in improved power efficiency and reduced thermal stress compared to typical P-channel MOSFETs. Its compact SuperSOT-6 package supports dense PCB designs without sacrificing performance. The wide temperature range and fast switching characteristics enhance reliability and speed, making it a superior choice for power-sensitive industrial applications.

STT4P3LLH6 Brand Info

The STT4P3LLH6 is a product of STMicroelectronics, a global leader in semiconductor manufacturing. Known for innovation and quality, STMicroelectronics delivers advanced MOSFET solutions that address power efficiency and reliability challenges in industrial electronics. This particular MOSFET benefits from ST’s expertise in robust device fabrication, ensuring consistent performance and support for demanding applications worldwide.

FAQ

What is the maximum voltage rating for the STT4P3LLH6?

The device is rated for a maximum drain-source voltage of -30 V, making it suitable for a wide range of low to medium voltage power switching applications.

How does the low on-resistance benefit system performance?

Lower on-resistance reduces conduction losses when the MOSFET is on, which improves efficiency and reduces heat generation. This

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