STS5P3LLH6 Overview
The STS5P3LLH6 is a high-performance N-channel MOSFET designed for efficient power switching applications. It features a low on-resistance and fast switching capability, making it suitable for industrial and automotive environments where reliability and thermal management are critical. This device supports a wide operating voltage range and offers robust avalanche energy rating, providing enhanced durability under demanding conditions. Engineers and sourcing specialists will appreciate its compact package and optimized electrical characteristics that contribute to power savings and improved system efficiency. For more detailed technical resources, visit IC Manufacturer.
STS5P3LLH6 Technical Specifications
| Parameter | Specification |
|---|---|
| Device Type | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | 30 V |
| Continuous Drain Current (ID) | 5.7 A |
| On-Resistance (RDS(on)) | 8.6 m?? @ VGS = 4.5 V |
| Gate Threshold Voltage (VGS(th)) | 1.0 V (typical) |
| Total Gate Charge (Qg) | 10 nC (typical) |
| Power Dissipation (PD) | 1.4 W |
| Package Type | SO-8 |
STS5P3LLH6 Key Features
- Low On-Resistance: Minimizes conduction losses, improving overall power efficiency in switching applications.
- Fast Switching Speed: Enables high-frequency operation, reducing switching losses and enhancing thermal performance.
- Robust Avalanche Energy Rating: Protects the device against voltage spikes and transient events, enhancing system reliability.
- Compact SO-8 Package: Allows for space-saving PCB designs while maintaining effective heat dissipation.
Typical Applications
- DC-DC converters in industrial power management systems requiring efficient voltage regulation and thermal stability.
- Load switching in automotive electronics, where robust performance under varying temperature conditions is essential.
- Motor control circuits that demand fast switching and low conduction losses for improved energy use.
- Battery protection and power distribution modules in portable and fixed power systems.
STS5P3LLH6 Advantages vs Typical Alternatives
This MOSFET stands out due to its low on-resistance combined with a moderate voltage rating, enabling lower power dissipation and improved thermal management compared to typical alternatives. Its fast switching and avalanche robustness provide enhanced reliability, making it ideal for industrial and automotive environments where system efficiency and durability are key. The compact SO-8 package also supports high-density PCB layouts, offering integration benefits without compromising performance.
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STS5P3LLH6 Brand Info
The STS5P3LLH6 is manufactured by STMicroelectronics, a global leader in semiconductor solutions. STMicroelectronics specializes in power MOSFETs optimized for industrial and automotive applications, delivering products that combine high efficiency, reliability, and compact design. Their portfolio is trusted by engineers for quality and performance in demanding environments, supported by comprehensive technical documentation and global support services.
FAQ
What is the maximum drain-source voltage of the STS5P3LLH6?
The device supports a maximum drain-source voltage of 30 volts, making it suitable for low to medium voltage power switching applications where efficient control and protection are necessary.
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How does the low on-resistance benefit power efficiency?
Lower on-resistance reduces conduction losses when the MOSFET is turned on, resulting in less heat generation and improved overall power efficiency, which is critical for energy-sensitive applications.
What packaging does this MOSFET use and why is it important?
This MOSFET is housed in an SO-8 package, which provides a compact footprint for PCB designs while offering effective heat dissipation and ease of assembly
